The influence of crystallization route on the SrBi2Nb2O9 thin films
Carregando...
Fontes externas
Fontes externas
Data
Orientador
Coorientador
Pós-graduação
Curso de graduação
Título da Revista
ISSN da Revista
Título de Volume
Editor
Springer Nature
Tipo
Artigo
Direito de acesso
Acesso aberto
Fontes externas
Fontes externas
Resumo
Polycrystalline SrBi2Nb2O9-layered ferroelectric thin films were synthesized on Pt/Ti/SiO2/Si substrate using the polymeric precursors solution. The dip-coated films were specular and crack-free and crystallized during firing at 700 °C. Single-, double-, and triple-layered films were obtained by several dips in the deposition solution, and the influence of crystallization between each dip was studied. Microstructure and morphological evaluation were followed by grazing incident x-ray diffraction (GIXRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Multilayered films obtained using the intermediate-crystallized layer route present a dense microstructure with spherical grains, with a preferential orientation in the 〈215〉 direction; films obtained using the intermediate-amorphous layer route are polycrystalline and present elongated grains around 250 nm in size.
Descrição
Palavras-chave
Crystal microstructure , Crystal orientation , Crystallization , Deposition , Ferroelectric materials , Grain size and shape , Morphology , Multilayers , Perovskite , Polycrystalline materials , Strontium compounds , Synthesis (chemical) , Grazing incident X ray diffraction (GIXRD) analysis , Dielectric films
Idioma
Inglês
Citação
Journal of Materials Research, v. 14, n. 3, p. 1026-1031, 1999.
