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Publicação:
Influence of Channel Silicon Thickness and Biological Material Permittivity on nTFET Biosensor

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dc.contributor.authorMacambira, Christian N.
dc.contributor.authorAgopian, Paula G. D. [UNESP]
dc.contributor.authorMartino, Joao A.
dc.contributor.authorIEEE
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2019-10-03T18:20:11Z
dc.date.available2019-10-03T18:20:11Z
dc.date.issued2018-01-01
dc.description.abstractThis work analyzes the effect of channel silicon thickness for different biological materials on n-type Tunnel-FET (nTFET) working as a biosensor. The bioelement materials are simulated using different dielectric permittivity materials (c) localized at the drain underlap region. The results of this work show that using the ambipolar current of the Tunnel-FET it presents better sensitivity. The best results for TFETs biosensor were obtained for the drain underlap of 15 nm and channel silicon thickness of 5 nm.en
dc.description.affiliationUniv Sao Paulo, PSI, LSI, Sao Paulo, Brazil
dc.description.affiliationSao Paulo State Univ UNESP, Sao Joao Da Boa Vista, Brazil
dc.description.affiliationUnespSao Paulo State Univ UNESP, Sao Joao Da Boa Vista, Brazil
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.format.extent4
dc.identifier.citation2018 33rd Symposium On Microelectronics Technology And Devices (sbmicro). New York: Ieee, 4 p., 2018.
dc.identifier.lattes0496909595465696
dc.identifier.orcid0000-0002-0886-7798
dc.identifier.urihttp://hdl.handle.net/11449/184139
dc.identifier.wosWOS:000451195800035
dc.language.isoeng
dc.publisherIeee
dc.relation.ispartof2018 33rd Symposium On Microelectronics Technology And Devices (sbmicro)
dc.rights.accessRightsAcesso abertopt
dc.sourceWeb of Science
dc.subjectBiosensor
dc.subjectTFET
dc.subjectSilicon Thickness
dc.subjectUnderlap
dc.subjectSensitivity
dc.subjectPermittivity
dc.titleInfluence of Channel Silicon Thickness and Biological Material Permittivity on nTFET Biosensoren
dc.typeTrabalho apresentado em eventopt
dcterms.licensehttp://www.ieee.org/publications_standards/publications/rights/rights_policies.html
dcterms.rightsHolderIeee
dspace.entity.typePublication
unesp.author.lattes0496909595465696[2]
unesp.author.orcid0000-0002-0886-7798[2]
unesp.campusUniversidade Estadual Paulista (UNESP), Faculdade de Engenharia, São João da Boa Vistapt

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São João da Boa Vista - FESJBV - Faculdade de Engenharia, São João da Boa Vista