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The effect of Nb doping on ferroelectric properties of PZT thin films prepared from polymeric precursors

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dc.contributor.authorSouza, ECF
dc.contributor.authorSimoes, A. Z.
dc.contributor.authorCilense, M.
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionLIEC
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:30:07Z
dc.date.available2014-05-20T15:30:07Z
dc.date.issued2004-11-15
dc.description.abstractPure and Nb doped PbZr0.4Ti0.603 thin films was prepared by the polymeric precursor method and deposited by spin coating on Pt/Ti/SiO2/Si (100) substrates and annealed at 700 degreesC. The films are oriented in (1 1 0) and (1 0 0) direction. The electric properties of PZT thin films show strong dependence of the crystallographic orientation. The P-E hysteresis loops for the thin film with composition PbZr0.39Ti0.6Nb0.103 showed good saturation, with values for coercive field (E-c) equal to 60 KV cm(-1) and for remanent polarization (P-r) equal to 20 muC cm(-2). The measured dielectric constant (epsilon) is 1084 for this film. These results show good potential for application in FERAM. (C) 2004 Elsevier B.V. All rights reserved.en
dc.description.affiliationLIEC, CMDMC, Araraquara, SP, Brazil
dc.description.affiliationUNESP, Inst Quim, BR-14800900 Araraquara, SP, Brazil
dc.description.affiliationUnespUNESP, Inst Quim, BR-14800900 Araraquara, SP, Brazil
dc.format.extent155-159
dc.identifierhttp://dx.doi.org/10.1016/j.matchemphys.2004.06.035
dc.identifier.citationMaterials Chemistry and Physics. Lausanne: Elsevier B.V. Sa, v. 88, n. 1, p. 155-159, 2004.
dc.identifier.doi10.1016/j.matchemphys.2004.06.035
dc.identifier.issn0254-0584
dc.identifier.lattes9128353103083394
dc.identifier.urihttp://hdl.handle.net/11449/39566
dc.identifier.wosWOS:000224370900027
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofMaterials Chemistry and Physics
dc.relation.ispartofjcr2.210
dc.relation.ispartofsjr0,615
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectPZTpt
dc.subjectNb doped PZTpt
dc.subjectFERAMpt
dc.subjectpolymeric precursorpt
dc.titleThe effect of Nb doping on ferroelectric properties of PZT thin films prepared from polymeric precursorsen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
dspace.entity.typePublication
unesp.author.lattes9128353103083394
unesp.author.lattes3573363486614904[2]
unesp.author.orcid0000-0003-2535-2187[2]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentBioquímica e Tecnologia - IQARpt
unesp.departmentFísico-Química - IQARpt

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