Publicação: The effect of Nb doping on ferroelectric properties of PZT thin films prepared from polymeric precursors
dc.contributor.author | Souza, ECF | |
dc.contributor.author | Simoes, A. Z. | |
dc.contributor.author | Cilense, M. | |
dc.contributor.author | Longo, Elson [UNESP] | |
dc.contributor.author | Varela, José Arana [UNESP] | |
dc.contributor.institution | LIEC | |
dc.contributor.institution | Universidade Estadual Paulista (Unesp) | |
dc.date.accessioned | 2014-05-20T15:30:07Z | |
dc.date.available | 2014-05-20T15:30:07Z | |
dc.date.issued | 2004-11-15 | |
dc.description.abstract | Pure and Nb doped PbZr0.4Ti0.603 thin films was prepared by the polymeric precursor method and deposited by spin coating on Pt/Ti/SiO2/Si (100) substrates and annealed at 700 degreesC. The films are oriented in (1 1 0) and (1 0 0) direction. The electric properties of PZT thin films show strong dependence of the crystallographic orientation. The P-E hysteresis loops for the thin film with composition PbZr0.39Ti0.6Nb0.103 showed good saturation, with values for coercive field (E-c) equal to 60 KV cm(-1) and for remanent polarization (P-r) equal to 20 muC cm(-2). The measured dielectric constant (epsilon) is 1084 for this film. These results show good potential for application in FERAM. (C) 2004 Elsevier B.V. All rights reserved. | en |
dc.description.affiliation | LIEC, CMDMC, Araraquara, SP, Brazil | |
dc.description.affiliation | UNESP, Inst Quim, BR-14800900 Araraquara, SP, Brazil | |
dc.description.affiliationUnesp | UNESP, Inst Quim, BR-14800900 Araraquara, SP, Brazil | |
dc.format.extent | 155-159 | |
dc.identifier | http://dx.doi.org/10.1016/j.matchemphys.2004.06.035 | |
dc.identifier.citation | Materials Chemistry and Physics. Lausanne: Elsevier B.V. Sa, v. 88, n. 1, p. 155-159, 2004. | |
dc.identifier.doi | 10.1016/j.matchemphys.2004.06.035 | |
dc.identifier.issn | 0254-0584 | |
dc.identifier.lattes | 9128353103083394 | |
dc.identifier.uri | http://hdl.handle.net/11449/39566 | |
dc.identifier.wos | WOS:000224370900027 | |
dc.language.iso | eng | |
dc.publisher | Elsevier B.V. | |
dc.relation.ispartof | Materials Chemistry and Physics | |
dc.relation.ispartofjcr | 2.210 | |
dc.relation.ispartofsjr | 0,615 | |
dc.rights.accessRights | Acesso restrito | |
dc.source | Web of Science | |
dc.subject | PZT | pt |
dc.subject | Nb doped PZT | pt |
dc.subject | FERAM | pt |
dc.subject | polymeric precursor | pt |
dc.title | The effect of Nb doping on ferroelectric properties of PZT thin films prepared from polymeric precursors | en |
dc.type | Artigo | |
dcterms.license | http://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy | |
dcterms.rightsHolder | Elsevier B.V. | |
dspace.entity.type | Publication | |
unesp.author.lattes | 9128353103083394 | |
unesp.author.lattes | 3573363486614904[2] | |
unesp.author.orcid | 0000-0003-2535-2187[2] | |
unesp.campus | Universidade Estadual Paulista (UNESP), Instituto de Química, Araraquara | pt |
unesp.department | Bioquímica e Tecnologia - IQAR | pt |
unesp.department | Físico-Química - IQAR | pt |
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