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Transparent and conductive ZnO : Al thin films prepared by sol-gel dip-coating

dc.contributor.authorValle, G. G.
dc.contributor.authorHammer, Peter [UNESP]
dc.contributor.authorPulcinelli, Sandra Helena [UNESP]
dc.contributor.authorSantilli, Celso Valentim [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:28:23Z
dc.date.available2014-05-20T15:28:23Z
dc.date.issued2004-01-01
dc.description.abstractAluminum doped zinc oxide polycrystalline thin films (AZO) were prepared by sol-gel dip-coating process. The sol was prepared from an ethanolic solution of zinc acetate using lithium hydroxide or succinic acid as hydrolytic catalyst. The quantity of aluminum in the sol was varied from 1 to 10 mol%. The structural characteristics studied by X-ray diffractometry were complemented by resistivity measurements and UV-Vis-NIR spectroscopy. The films are transparent from the near ultraviolet to the near infrared, presenting an absorption cut-off at almost 290 nm, irrespective of the nature of the catalyst and doping level. The best conductors were obtained for the AZO films containing 3 mol% of aluminum, prepared under acidic and basic catalysis and sintered at 450 degreesC. Their optical band-gap of 4.4 eV calculated from the absorption cut-off is larger than the values for band-gap widening predicted by the standard model for polar semiconductors. These polycrystalline films are textured with preferential orientation of grains along the wurtzite c-axis or the (100) direction. (C) 2003 Elsevier Ltd. All rights reserved.en
dc.description.affiliationUNESP, Inst Quim, BR-14800970 Araraquara, SP, Brazil
dc.description.affiliationUnespUNESP, Inst Quim, BR-14800970 Araraquara, SP, Brazil
dc.format.extent1009-1013
dc.identifierhttp://dx.doi.org/10.1016/S0955-2219(03)00597-1
dc.identifier.citationJournal of the European Ceramic Society. Oxford: Elsevier B.V., v. 24, n. 6, p. 1009-1013, 2004.
dc.identifier.doi10.1016/S0955-2219(03)00597-1
dc.identifier.issn0955-2219
dc.identifier.lattes6466841023506131
dc.identifier.lattes9971202585286967
dc.identifier.lattes5584298681870865
dc.identifier.orcid0000-0002-3823-0050
dc.identifier.orcid0000-0002-8356-8093
dc.identifier.urihttp://hdl.handle.net/11449/38193
dc.identifier.wosWOS:000189247800022
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofJournal of the European Ceramic Society
dc.relation.ispartofjcr3.794
dc.relation.ispartofsjr1,068
dc.rights.accessRightsAcesso restritopt
dc.sourceWeb of Science
dc.subjectaluminum dopingpt
dc.subjectconductivitypt
dc.subjectsol-gelpt
dc.subjectzinc oxide filmspt
dc.titleTransparent and conductive ZnO : Al thin films prepared by sol-gel dip-coatingen
dc.typeArtigopt
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
dspace.entity.typePublication
relation.isOrgUnitOfPublicationbc74a1ce-4c4c-4dad-8378-83962d76c4fd
relation.isOrgUnitOfPublication.latestForDiscoverybc74a1ce-4c4c-4dad-8378-83962d76c4fd
unesp.author.lattes6466841023506131(2)
unesp.author.lattes9971202585286967
unesp.author.lattes5584298681870865[4]
unesp.author.orcid0000-0002-3823-0050(2)
unesp.author.orcid0000-0002-8356-8093[4]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentFísico-Química - IQARpt

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