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Impact of oxygen atmosphere on piezoelectric properties of CaBi2Nb2O9 thin films

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dc.contributor.authorSimoes, A. Z.
dc.contributor.authorRiccardi, C. S.
dc.contributor.authorCavalcante, L. S.
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.authorMizaikoff, B.
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.contributor.institutionGeorgia Inst Technol
dc.date.accessioned2014-05-20T14:17:56Z
dc.date.available2014-05-20T14:17:56Z
dc.date.issued2007-08-01
dc.description.abstractCaBi2Nb2O9 (CBNO) thin films were deposited on platinum-coated silicon substrates by the polymeric precursor method, and were annealed in air and in an oxygen atmosphere. The structure, surface morphology and electrical properties of CBNO thin films have been investigated. The presence of an oxygen atmosphere during crystallization of the films affected the structure perfection and morphology, as well as ferroelectric and piezoelectric properties. A reduction in P-r and piezoelectric coefficient, an increase of V-c and displacement of the Curie point is evident in the films crystallized in an oxygen atmosphere. The impact of exposure to the oxygen atmosphere on the creation of defects caused by bismuth and oxygen vacancies between layers was also investigated by X-ray photoelectron spectroscopy. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.en
dc.description.affiliationUniv Estadual Paulista, Inst Quim, Dept Fisico Quim, Lab Interdisciplinar Ceram, BR-14801907 Araraquara, SP, Brazil
dc.description.affiliationUniv Fed Sao Carlos, Dept Quim, Lab Interdisciplinar Eletroquim & Ceram, BR-13565905 Sao Carlos, SP, Brazil
dc.description.affiliationGeorgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA
dc.description.affiliationUnespUniv Estadual Paulista, Inst Quim, Dept Fisico Quim, Lab Interdisciplinar Ceram, BR-14801907 Araraquara, SP, Brazil
dc.format.extent4707-4712
dc.identifierhttp://dx.doi.org/10.1016/j.actamat.2007.04.030
dc.identifier.citationActa Materialia. Oxford: Pergamon-Elsevier B.V., v. 55, n. 14, p. 4707-4712, 2007.
dc.identifier.doi10.1016/j.actamat.2007.04.030
dc.identifier.issn1359-6454
dc.identifier.urihttp://hdl.handle.net/11449/25382
dc.identifier.wosWOS:000248823200012
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofActa Materialia
dc.relation.ispartofjcr6.036
dc.relation.ispartofsjr3,263
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectpiezoelectricitypt
dc.subjectvacanciespt
dc.subjectpoint defectspt
dc.subjectCaBi2Nb2O9pt
dc.subjectx-ray photoelectron spectroscopypt
dc.titleImpact of oxygen atmosphere on piezoelectric properties of CaBi2Nb2O9 thin filmsen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
dspace.entity.typePublication
unesp.author.lattes3573363486614904[1]
unesp.author.lattes0173401604473200[2]
unesp.author.orcid0000-0003-2535-2187[1]
unesp.author.orcid0000-0003-2192-5312[2]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentBioquímica e Tecnologia - IQARpt
unesp.departmentFísico-Química - IQARpt

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