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Growth and characterization of BaBi2Nb2O9 thin films made by RF-magnetron sputtering

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dc.contributor.authorMazon, T.
dc.contributor.authorJoanni, E.
dc.contributor.authorFernandes, JRA
dc.contributor.authorZaghete, M. A.
dc.contributor.authorCilense, M.
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniv Tras os Montes & Alto Douro
dc.contributor.institutionUNESC Porto
dc.date.accessioned2014-05-20T15:28:23Z
dc.date.available2014-05-20T15:28:23Z
dc.date.issued2003-01-01
dc.description.abstractThe RF-magnetron sputtering technique has been used to deposit polycrystalline thin films of layered-structured ferroelectric BaBi2Nb2O9 (BBN). The XRD patterns for the films annealed at 700degreesC for 1 hour show the presence of the BBN phase as well as the BaNb2O6 secondary phase. A better crystallization of the BBN phase and an inhibition of the secondary phase is obtained with the increase of temperature. The surface of the prepared films was rather dense and smooth with no cracks. The 300 nm thick BBN thin films exhibited a room-temperature dielectric constant of about 779 with a dissipation factor of 0.09 at a frequency of 100 kHz.en
dc.description.affiliationUniv Estadual Paulista, UNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil
dc.description.affiliationUniv Tras os Montes & Alto Douro, UTAD, Dept Fis, P-5001911 Vila Real, Portugal
dc.description.affiliationUNESC Porto, Unidade Optoelect & Sistemas Elect, P-4169007 Oporto, Portugal
dc.description.affiliationUnespUniv Estadual Paulista, UNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil
dc.format.extent201-207
dc.identifierhttp://dx.doi.org/10.1080/00150190390238405
dc.identifier.citationFerroelectrics. Abingdon: Taylor & Francis Ltd, v. 293, p. 201-207, 2003.
dc.identifier.doi10.1080/00150190390238405
dc.identifier.issn0015-0193
dc.identifier.lattes4966823021866296
dc.identifier.lattes9128353103083394
dc.identifier.urihttp://hdl.handle.net/11449/38199
dc.identifier.wosWOS:000186526300020
dc.language.isoeng
dc.publisherTaylor & Francis Ltd
dc.relation.ispartofFerroelectrics
dc.relation.ispartofjcr0.728
dc.relation.ispartofsjr0,260
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectBaBi2Nb2O9pt
dc.subjectthin filmspt
dc.subjectdielectric propertiespt
dc.subjectRF-magnetron sputteringpt
dc.titleGrowth and characterization of BaBi2Nb2O9 thin films made by RF-magnetron sputteringen
dc.typeArtigo
dcterms.licensehttp://journalauthors.tandf.co.uk/permissions/reusingOwnWork.asp
dcterms.rightsHolderTaylor & Francis Ltd
dspace.entity.typePublication
unesp.author.lattes4966823021866296
unesp.author.lattes9128353103083394
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentFísico-Química - IQARpt

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Araraquara - IQAR - Instituto de Química