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Ferroelectric and piezoelectric properties of bismuth layered thin films grown on (100) Pt electrodes

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dc.contributor.authorSimões, Alexandre Zirpoli [UNESP]
dc.contributor.authorRiccardi, C. S. [UNESP]
dc.contributor.authorRies, A. [UNESP]
dc.contributor.authorRamirez, M. A. [UNESP]
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T13:28:13Z
dc.date.available2014-05-20T13:28:13Z
dc.date.issued2008-01-21
dc.description.abstractThe effect of film orientation on piezoelectric and ferroelectric properties of bismuth layered compounds deposited on platinum coated silicon substrates was investigated. Piezo-force microscopy was used to probe the local piezoelectric properties of Bi(4)Ti(3)O(12), CaBi(4)Ti(4)O(15) and SrBi(4)Ti(4)O(15) films. Our measurements on individual grains clearly reveal that the local piezoelectric properties are determined by the polarization state of the grain. A piezoelectric coefficient of 65 pm/V was attained after poling in a grain with a polar axis very close to the normal direction. The piezoelectric coefficient and the remanent polarization were larger for a-b axes oriented than for c-axis-oriented films. (c) 2007 Elsevier B.V All rights reserved.en
dc.description.affiliationUniv Estadual Paulista, UNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, UNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil
dc.identifierhttp://dx.doi.org/10.1016/j.jmatprotec.2007.06.039
dc.identifier.citationJournal of Materials Processing Technology. Lausanne: Elsevier B.V. Sa, v. 196, n. 1-3, p. 10-14, 2008.
dc.identifier.doi10.1016/j.jmatprotec.2007.06.039
dc.identifier.issn0924-0136
dc.identifier.lattes3573363486614904
dc.identifier.urihttp://hdl.handle.net/11449/9368
dc.identifier.wosWOS:000252623200002
dc.language.isoeng
dc.publisherElsevier B.V. Sa
dc.relation.ispartofJournal of Materials Processing Technology
dc.relation.ispartofjcr3.647
dc.relation.ispartofsjr1,695
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectferroelectricityen
dc.subjectthin-filmen
dc.subjectpiezoelectricityen
dc.titleFerroelectric and piezoelectric properties of bismuth layered thin films grown on (100) Pt electrodesen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V. Sa
dspace.entity.typePublication
unesp.author.lattes3573363486614904
unesp.author.lattes0173401604473200[2]
unesp.author.orcid0000-0003-2192-5312[2]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.campusUniversidade Estadual Paulista (UNESP), Faculdade de Engenharia, Guaratinguetápt
unesp.departmentMateriais e Tecnologia - FEGpt
unesp.departmentBioquímica e Tecnologia - IQARpt
unesp.departmentFísico-Química - IQARpt

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Coleções

Guaratinguetá - FEG - Faculdade de Engenharia e Ciências
Araraquara - IQAR - Instituto de Química