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Induced fractional valley number in graphene with topological defects

dc.contributor.authorObispo, Angel E. [UNESP]
dc.contributor.authorHott, Marcelo [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2018-12-11T16:56:54Z
dc.date.available2018-12-11T16:56:54Z
dc.date.issued2015-01-10
dc.description.abstractWe report on the possibility of valley number fractionalization in graphene with a topological defect that is accounted for in the Dirac equation by a pseudomagnetic field. The valley number fractionalization is attributable to an imbalance in the number of one-particle states in one of the two Dirac points with respect to the other. The difference in the number of one-particle states is manifest and can be exactly evaluated thanks to an external uniform magnetic field. Although the external magnetic field is precluded, the net valley number results in being dependent only on the flux of the pseudomagnetic field. We also discuss the analogous effect that the topological defect might lead to the induced spin polarization of the charge carriers in graphene.en
dc.description.affiliationUNESP-Universidade Estadual Paulista, Campus de Guaratinguetá, DFQ
dc.description.affiliationUnespUNESP-Universidade Estadual Paulista, Campus de Guaratinguetá, DFQ
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.identifierhttp://dx.doi.org/10.1103/PhysRevB.91.035404
dc.identifier.citationPhysical Review B - Condensed Matter and Materials Physics, v. 91, n. 3, 2015.
dc.identifier.doi10.1103/PhysRevB.91.035404
dc.identifier.file2-s2.0-84920836691.pdf
dc.identifier.issn1550-235X
dc.identifier.issn1098-0121
dc.identifier.scopus2-s2.0-84920836691
dc.identifier.urihttp://hdl.handle.net/11449/171754
dc.language.isoeng
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physics
dc.relation.ispartofsjr1,604
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.titleInduced fractional valley number in graphene with topological defectsen
dc.typeArtigo
dspace.entity.typePublication
unesp.departmentFísica e Química - FEGpt

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