Publicação:
Piezoelectric properties of Bi4Ti3O12 thin films annealed in different atmospheres

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dc.contributor.authorSimoes, A. Z.
dc.contributor.authorRiccardi, C. S.
dc.contributor.authorGonzalez, A. H. M.
dc.contributor.authorRies, A.
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:25:57Z
dc.date.available2014-05-20T15:25:57Z
dc.date.issued2007-05-03
dc.description.abstractBismuth titanate (Bi4Ti3O12-BIT) films were evaluated for use as lead-free piezoelectric thin-films in micro-electromechanical systems. The films were grown by the polymeric precursor method on Pt/Ti/SiO2/Si (1 0 0) (Pt) bottom electrodes at 700 degrees C for 2 h in static air and oxygen atmospheres. The domain structure was investigated by piezoresponse force microscopy (PFM). Annealing in static air leads to better ferroelectric properties, higher remanent polarization, lower drive voltages and higher piezoelectric coefficient. on the other hand, oxygen atmosphere favors the imprint phenomenon and reduces the piezoelectric coefficient dramatically. Impedance data, represented by means of Nyquist diagrams, show a dramatic increase in the resistivity for the films annealed in static air atmopshere. (c) 2006 Elsevier Ltd. All rights reserved.en
dc.description.affiliationUNESP Paulista State Univ, Inst Chem, BR-14801970 Araraquara, SP, Brazil
dc.description.affiliationUnespUNESP Paulista State Univ, Inst Chem, BR-14801970 Araraquara, SP, Brazil
dc.format.extent967-974
dc.identifierhttp://dx.doi.org/10.1016/j.materresbull.2006.08.014
dc.identifier.citationMaterials Research Bulletin. Oxford: Pergamon-Elsevier B.V., v. 42, n. 5, p. 967-974, 2007.
dc.identifier.doi10.1016/j.materresbull.2006.08.014
dc.identifier.issn0025-5408
dc.identifier.urihttp://hdl.handle.net/11449/36262
dc.identifier.wosWOS:000245842600023
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofMaterials Research Bulletin
dc.relation.ispartofjcr2.873
dc.relation.ispartofsjr0,746
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectceramicspt
dc.subjectchemical synthesispt
dc.subjectpiezoelectricitypt
dc.titlePiezoelectric properties of Bi4Ti3O12 thin films annealed in different atmospheresen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
dspace.entity.typePublication
unesp.author.lattes3573363486614904[1]
unesp.author.lattes0173401604473200[2]
unesp.author.orcid0000-0003-2535-2187[1]
unesp.author.orcid0000-0003-2192-5312[2]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentBioquímica e Tecnologia - IQARpt
unesp.departmentFísico-Química - IQARpt

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Araraquara - IQAR - Instituto de Química