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Indium tin oxide films prepared via wet chemical route

dc.contributor.authorLegnani, C.
dc.contributor.authorLima, S. A. M. [UNESP]
dc.contributor.authorOliveira, H. H. S. [UNESP]
dc.contributor.authorQuirino, W. G.
dc.contributor.authorMachado, R.
dc.contributor.authorSantos, R. M. B.
dc.contributor.authorDavolos, Marian Rosaly [UNESP]
dc.contributor.authorAchete, C. A.
dc.contributor.authorCremona, M.
dc.contributor.institutionPontifícia Universidade Católica do Rio de Janeiro (PUC-Rio)
dc.contributor.institutionDIMAT
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:23:00Z
dc.date.available2014-05-20T15:23:00Z
dc.date.issued2007-12-03
dc.description.abstractIn this work, indium tin oxide (ITO) films were prepared using a wet chemical route, the Pechini method. This consists of a polyesterification reaction between an alpha-hydroxicarboxylate complex (indium citrate and tin citrate) with a polyalcohol (ethylene glycol) followed by a post annealing at 500 degrees C. A 10 at.% of doping of Sn4+ ions into an In2O3 matrix was successfully achieved through this method. In order to characterize the structure, the morphology as well as the optical and electrical properties of the produced ITO films, they were analyzed using different experimental techniques. The obtained films are highly transparent, exhibiting transmittance of about 85% at 550 nm. They are crystalline with a preferred orientation of [222]. Microscopy discloses that the films are composed of grains of 30 nm average size and 0.63 nm RMS roughness. The films' measured resistivity, mobility and charge carrier concentration were 5.8 x 10(-3) Omega cm, 2.9 cm(2)/V s and -3.5 x 10(20)/cm(3), respectively. While the low mobility value can be related to the small grain size, the charge carrier concentration value can be explained in terms of the high oxygen concentration level resulting from the thermal treatment process performed in air. The experimental conditions are being refined to improve the electrical characteristics of the films while good optical, chemical, structural and morphological qualities already achieved are maintained. (C) 2007 Elsevier B.V. All rights reserved.en
dc.description.affiliationPontificia Univ Catolica Rio de Janeiro, Rio de Janeiro, Brazil
dc.description.affiliationDIMAT, Inst Nacl Metrol & Qualidade Ind Inmetro, Duque de Caxias, RJ, Brazil
dc.description.affiliationUniv Estadual Paulista, Inst Quim, Araraquara, SP, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, Inst Quim, Araraquara, SP, Brazil
dc.format.extent193-197
dc.identifierhttp://dx.doi.org/10.1016/j.tsf.2007.06.137
dc.identifier.citationThin Solid Films. Lausanne: Elsevier B.V. Sa, v. 516, n. 2-4, p. 193-197, 2007.
dc.identifier.doi10.1016/j.tsf.2007.06.137
dc.identifier.issn0040-6090
dc.identifier.lattes4284809342546287
dc.identifier.urihttp://hdl.handle.net/11449/33870
dc.identifier.wosWOS:000252037500017
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofThin Solid Films
dc.relation.ispartofjcr1.939
dc.relation.ispartofsjr0,617
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectindium tin oxidept
dc.subjectITOpt
dc.subjectwet chemical routept
dc.subjectPechinipt
dc.subjectXPSpt
dc.titleIndium tin oxide films prepared via wet chemical routeen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
dspace.entity.typePublication
unesp.author.lattes4284809342546287
unesp.author.orcid0000-0001-8326-1465[7]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentQuímica Inorgânica - IQARpt

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