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Epitaxial growth of LiNbO3 thin films in a microwave oven

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dc.contributor.authorVasconcelos, NSLS
dc.contributor.authorVasconcelos, J. S.
dc.contributor.authorBouquet, V
dc.contributor.authorZanetti, S. M.
dc.contributor.authorLeite, E. R.
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorSoledade, LEB
dc.contributor.authorPontes, F. M.
dc.contributor.authorGuilloux-Viry, M.
dc.contributor.authorPerrin, A.
dc.contributor.authorBernardi, M. I.
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.contributor.institutionCentro Federal de Educação Tecnológica (CEFET)
dc.contributor.institutionUniv Rennes 1
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.date.accessioned2014-05-20T15:21:31Z
dc.date.available2014-05-20T15:21:31Z
dc.date.issued2003-07-31
dc.description.abstractOriented LiNbO3 thin films were prepared using a polymeric precursor solution deposited on (0001) sapphire substrate by spin coating and crystallized in a microwave oven. Crystallization of the films was carried out in a domestic microwave oven. The influence of this type of heat treatment on the film orientation was analyzed by X-ray diffraction and electron channeling patterns, which revealed epitaxial growth of films crystallized at 550 and 650 degreesC for 10 min. A microstructural study indicated that the films treated at temperatures below 600 degreesC were homogeneous and dense, and the optical properties confirmed the good quality of these films. (C) 2003 Elsevier B.V. B.V. All rights reserved.en
dc.description.affiliationUNESP, CMDMC, LIEC, Inst Quim, BR-14801907 Araraquara, SP, Brazil
dc.description.affiliationUniv Fed Sao Carlos, CMDMC, LIEC, Dept Quim, BR-13565 Sao Carlos, Brazil
dc.description.affiliationCEFET MA, Dept Quim, BR-65025001 Sao Luis, MA, Brazil
dc.description.affiliationCEFET MA, Dept Eletro Eletron, BR-65025001 Sao Luis, MA, Brazil
dc.description.affiliationUniv Rennes 1, LCSIM, Inst Chim Renne, F-35042 Rennes, France
dc.description.affiliationUniv São Paulo, Inst Fis, CMDMC, GCCMC, Sao Carlos, SP, Brazil
dc.description.affiliationUnespUNESP, CMDMC, LIEC, Inst Quim, BR-14801907 Araraquara, SP, Brazil
dc.format.extent213-219
dc.identifierhttp://dx.doi.org/10.1016/S0040-6090(03)00587-X
dc.identifier.citationThin Solid Films. Lausanne: Elsevier B.V. Sa, v. 436, n. 2, p. 213-219, 2003.
dc.identifier.doi10.1016/S0040-6090(03)00587-X
dc.identifier.issn0040-6090
dc.identifier.urihttp://hdl.handle.net/11449/32653
dc.identifier.wosWOS:000183945700011
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofThin Solid Films
dc.relation.ispartofjcr1.939
dc.relation.ispartofsjr0,617
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectepitaxypt
dc.subjectthin filmspt
dc.subjectmicrowavept
dc.subjectoptical propertiespt
dc.titleEpitaxial growth of LiNbO3 thin films in a microwave ovenen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
dspace.entity.typePublication
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentBioquímica e Tecnologia - IQARpt
unesp.departmentFísico-Química - IQARpt

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Araraquara - IQAR - Instituto de Química