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Strain relaxation and stress-driven interdiffusion in InAsInGaAsInP nanowires

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dc.contributor.authorNieto, L.
dc.contributor.authorBortoleto, J. R R [UNESP]
dc.contributor.authorCotta, M. A.
dc.contributor.authorMagalhães-Paniago, R.
dc.contributor.authorGutírrez, H. R.
dc.contributor.institutionUniversidade Estadual de Campinas (UNICAMP)
dc.contributor.institutionUniversidade Federal de Minas Gerais (UFMG)
dc.contributor.institutionPennsylvania State University
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-27T11:22:33Z
dc.date.available2014-05-27T11:22:33Z
dc.date.issued2007-08-17
dc.description.abstractThe authors have investigated strain relaxation in InAsInGaAsInP nanowires (NW's). Transmission electron microscopy images show an additional stress field attributed to compositional modulation in the ternary layer, which disrupts NW formation and drives Ga interdiffusion into InAs, according to grazing incidence x-Ray diffraction under anomalous scattering conditions. The strain profile along the NW, however, is not significantly affected when interdiffusion is considered. Results show that the InAs NW energetic stability is preserved with the introduction of ternary buffer layer in the structure. © 2007 American Institute of Physics.en
dc.description.affiliationInstituto de Física Gleb Wataghin UNICAMP, CP 6165, 13083-970 Campinas, São Paulo
dc.description.affiliationDepartamento de Física UFMG, CP 702, Minas Gerais
dc.description.affiliationDepartment of Physicsf Pennsylvania State University, University Park, PA 16802-6300
dc.description.affiliationCampus Experimental de Sorocaba GPM UNESP, Sorocaba, 18087-180 São Paulo
dc.description.affiliationUnespCampus Experimental de Sorocaba GPM UNESP, Sorocaba, 18087-180 São Paulo
dc.identifierhttp://dx.doi.org/10.1063/1.2764446
dc.identifier.citationApplied Physics Letters, v. 91, n. 6, 2007.
dc.identifier.doi10.1063/1.2764446
dc.identifier.file2-s2.0-34547838676.pdf
dc.identifier.issn0003-6951
dc.identifier.scopus2-s2.0-34547838676
dc.identifier.urihttp://hdl.handle.net/11449/69820
dc.language.isoeng
dc.relation.ispartofApplied Physics Letters
dc.relation.ispartofjcr3.495
dc.relation.ispartofsjr1,382
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.subjectDiffusion
dc.subjectIndium compounds
dc.subjectStrain relaxation
dc.subjectTransmission electron microscopy
dc.subjectX ray diffraction
dc.subjectCompositional modulation
dc.subjectStress driven interdiffusion
dc.subjectStress fields
dc.subjectTernary layers
dc.subjectNanowires
dc.titleStrain relaxation and stress-driven interdiffusion in InAsInGaAsInP nanowiresen
dc.typeArtigo
dcterms.licensehttp://publishing.aip.org/authors/web-posting-guidelines
dspace.entity.typePublication
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Ciência e Tecnologia, Sorocabapt
unesp.departmentEngenharia de Controle e Automação - ICTSpt

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