Publicação: High dielectric constant of SrTiO3 thin films prepared by chemical process
dc.contributor.author | Pontes, F. M. | |
dc.contributor.author | Lee, EJH | |
dc.contributor.author | Leite, E. R. | |
dc.contributor.author | Longo, Elson [UNESP] | |
dc.contributor.author | Varela, José Arana [UNESP] | |
dc.contributor.institution | Universidade Federal de São Carlos (UFSCar) | |
dc.contributor.institution | Universidade Estadual Paulista (Unesp) | |
dc.date.accessioned | 2014-05-20T15:23:06Z | |
dc.date.available | 2014-05-20T15:23:06Z | |
dc.date.issued | 2000-10-01 | |
dc.description.abstract | SrTiO3 thin films were prepared by the polymeric precursor method and deposited by spin-coating onto Pt/Ti/SiO2/Si(100) substrates. The spin-coated films heat treated at 700 degrees C were crack-free, dense, and homogeneous. Microstructural and morphological evaluations were followed by grazing incident X-ray, scanning electron microscopy and atomic force microscopy. Dielectric studies indicated a dielectric constant of about 475, which is higher than that of ceramic SrTiO3, and a factor dissipation of about 0.050 at 100 kHz. SrTiO3 thin films were found to have paraelectric properties with C-V characteristics. (C) 2000 Kluwer Academic Publishers. | en |
dc.description.affiliation | Univ Fed Sao Carlos, Dept Chem, BR-13560905 Sao Carlos, SP, Brazil | |
dc.description.affiliation | UNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil | |
dc.description.affiliationUnesp | UNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil | |
dc.format.extent | 4783-4787 | |
dc.identifier | http://dx.doi.org/10.1023/A:1004816611050 | |
dc.identifier.citation | Journal of Materials Science. Dordrecht: Kluwer Academic Publ, v. 35, n. 19, p. 4783-4787, 2000. | |
dc.identifier.doi | 10.1023/A:1004816611050 | |
dc.identifier.issn | 0022-2461 | |
dc.identifier.uri | http://hdl.handle.net/11449/33951 | |
dc.identifier.wos | WOS:000089053600005 | |
dc.language.iso | eng | |
dc.publisher | Kluwer Academic Publ | |
dc.relation.ispartof | Journal of Materials Science | |
dc.relation.ispartofjcr | 2.993 | |
dc.relation.ispartofsjr | 0,807 | |
dc.rights.accessRights | Acesso restrito | |
dc.source | Web of Science | |
dc.title | High dielectric constant of SrTiO3 thin films prepared by chemical process | en |
dc.type | Artigo | |
dcterms.license | http://www.springer.com/open+access/authors+rights | |
dcterms.rightsHolder | Kluwer Academic Publ | |
dspace.entity.type | Publication | |
unesp.campus | Universidade Estadual Paulista (UNESP), Instituto de Química, Araraquara | pt |
unesp.department | Bioquímica e Tecnologia - IQAR | pt |
unesp.department | Físico-Química - IQAR | pt |
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