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Influence of Ga incorporation on photoinduced phenomena in Ge-S based glasses

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dc.contributor.authorLedemi, Y. [UNESP]
dc.contributor.authorMessaddeq, S. H. [UNESP]
dc.contributor.authorSkhripachev, I. [UNESP]
dc.contributor.authorRibeiro, Sidney José Lima [UNESP]
dc.contributor.authorMessaddeq, Younes [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniv Rennes
dc.date.accessioned2014-05-20T15:33:31Z
dc.date.available2014-05-20T15:33:31Z
dc.date.issued2009-10-01
dc.description.abstractTo study the influence of Ga addition on photoinduced effect, GaGeS glasses with constant atomic ratio S/Ge = 2.6 have been prepared. Using Raman spectroscopy, we have reported the effect of Ga on the structural behavior of these glasses. An increase of the glass transition temperature T(g), the linear refractive index and the density have been observed with increasing gallium content. The photoinduced phenomena have been examined through the influence of time exposure and power density, when exposed to above light bandgap (3.53 eV). The correlation between photoinduced phenomena and Ga content in such glasses are shown hereby. (C) 2009 Elsevier B.V. All rights reserved.en
dc.description.affiliationUNESP, Inst Quim, Lab Mat Foton, BR-14801970 Araraquara, SP, Brazil
dc.description.affiliationUniv Rennes, Equipe Verres & Ceram, UMR Sci Chim Rennes 6226, F-35042 Rennes, France
dc.description.affiliationUnespUNESP, Inst Quim, Lab Mat Foton, BR-14801970 Araraquara, SP, Brazil
dc.format.extent1884-1889
dc.identifierhttp://dx.doi.org/10.1016/j.jnoncrysol.2009.04.046
dc.identifier.citationJournal of Non-crystalline Solids. Amsterdam: Elsevier B.V., v. 355, n. 37-42, p. 1884-1889, 2009.
dc.identifier.doi10.1016/j.jnoncrysol.2009.04.046
dc.identifier.issn0022-3093
dc.identifier.lattes6446047463034654
dc.identifier.lattes2998503841917815
dc.identifier.orcid0000-0003-3286-9440
dc.identifier.urihttp://hdl.handle.net/11449/42118
dc.identifier.wosWOS:000270620900025
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofJournal of Non-Crystalline Solids
dc.relation.ispartofjcr2.488
dc.relation.ispartofsjr0,722
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectRaman scatteringen
dc.subjectChalcogenidesen
dc.subjectPhotoinduced effectsen
dc.titleInfluence of Ga incorporation on photoinduced phenomena in Ge-S based glassesen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
dspace.entity.typePublication
unesp.author.lattes6446047463034654
unesp.author.lattes2998503841917815
unesp.author.orcid0000-0003-3286-9440[4]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentQuímica Inorgânica - IQARpt

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Araraquara - IQAR - Instituto de Química