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A study of the doping process in Li4Ti5O12 and TiO2 battery electrode materials studied in the ion-gated transistor configuration

dc.contributor.authorGarza, José Ramón Herrera
dc.contributor.authorCamargo, Luan Pereira
dc.contributor.authorAzari, Ramin Karimi
dc.contributor.authorNeres, Lariel Chagas da Silva [UNESP]
dc.contributor.authorKhaleel, Shahid
dc.contributor.authorBarbosa, Martin Schwellberger
dc.contributor.authorSoavi, Francesca
dc.contributor.authorSantato, Clara
dc.contributor.institutionPolytechnique Montreal
dc.contributor.institutionUniversidade Estadual de Londrina (UEL)
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)
dc.contributor.institutionFederal University of Goias (UFG)
dc.contributor.institutionAlma Mater Studiorum Universitá di Bologna
dc.date.accessioned2025-04-29T18:36:49Z
dc.date.issued2023-12-22
dc.description.abstractUnderstanding how the electronic conductivity of metal oxides used as electrode materials in Li-ion batteries (LIBs) evolves as a function of the degree of lithiation/delithiation is relevant to try to prolong the battery lifetime, which affects, among others, the sustainability of LIBs. We propose the use of ion-gated transistors (IGTs) employed as transistor channel material films of Li4Ti5O12 (LTO) and TiO2 interfaced to the ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMIM][TFSI]) including the salt LiTFSI, to study the evolution of the doping mechanism, charge carrier density and mobility with the advancement of lithiation/delithiation in the films. The process of lithiation/delithiation is controlled by the electrical bias applied at the gate electrode, made of carbon paper coated with high surface area activated carbon. The sweeping rate of the gate bias affects the kinetics of Li intercalation/deintercalation and, consequently, the electronic doping of the transistor channel. We discuss how different doping mechanisms, namely electrostatic, “purely” electrochemical, or electrochemical possibly associated with structural changes in the transistor channel are possible for the metal oxide films. We consider such a discussion relevant to contribute to the optimal use of the electrode materials in LIBs.en
dc.description.affiliationEngineering Physics Department Polytechnique Montreal
dc.description.affiliationChemistry Department CCE State University of Londrina (UEL), PR
dc.description.affiliationInstitute of Chemistry São Paulo State University (UNESP), SP
dc.description.affiliationInstitute of Chemistry Federal University of Goias (UFG), Av. Esperança, s/n—Chácaras de Recreio Samambaia
dc.description.affiliationDepartment of Chemistry Giacomo Ciamician Alma Mater Studiorum Universitá di Bologna, Via Selmi 2
dc.description.affiliationUnespInstitute of Chemistry São Paulo State University (UNESP), SP
dc.format.extent2416-2422
dc.identifierhttp://dx.doi.org/10.1039/d3tc03517d
dc.identifier.citationJournal of Materials Chemistry C, v. 12, n. 7, p. 2416-2422, 2023.
dc.identifier.doi10.1039/d3tc03517d
dc.identifier.issn2050-7534
dc.identifier.issn2050-7526
dc.identifier.scopus2-s2.0-85180603166
dc.identifier.urihttps://hdl.handle.net/11449/298336
dc.language.isoeng
dc.relation.ispartofJournal of Materials Chemistry C
dc.sourceScopus
dc.titleA study of the doping process in Li4Ti5O12 and TiO2 battery electrode materials studied in the ion-gated transistor configurationen
dc.typeArtigopt
dspace.entity.typePublication
relation.isOrgUnitOfPublicationbc74a1ce-4c4c-4dad-8378-83962d76c4fd
relation.isOrgUnitOfPublication.latestForDiscoverybc74a1ce-4c4c-4dad-8378-83962d76c4fd
unesp.author.orcid0000-0003-3857-7270 0000-0003-3857-7270[2]
unesp.author.orcid0000-0002-8498-7476[3]
unesp.author.orcid0000-0003-1255-357X[6]
unesp.author.orcid0000-0003-3415-6938[7]
unesp.author.orcid0000-0001-6731-0538[8]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt

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