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Electronic, optical, and mechanical properties of novel h-C10N3 and h-C9N4 carbon nitride monolayers from first principles

dc.contributor.authorLaranjeira, Jose A. S. [UNESP]
dc.contributor.authorLima, Kleuton A. L.
dc.contributor.authorMartins, Nicolas F. [UNESP]
dc.contributor.authorAparicio-Huacarpuma, Bill. D.
dc.contributor.authorRibeiro Junior, Luiz A.
dc.contributor.authorSambrano, Julio R. [UNESP]
dc.date.accessioned2026-04-24T21:56:08Z
dc.date.issued2025-11-12
dc.description.abstractContextWe theoretically designed and systematically characterized two novel two-dimensional carbon nitride monolayers, h-C10$$_{10}$$N3$$_3$$ and h-C9$$_9$$N4, based on interconnected acepentalene motifs. Using density functional theory (DFT), we demonstrated their structural stability, confirmed by cohesive energies of -$$-$$6.89 eV/atom and -$$-$$6.92 eV/atom, respectively. Dynamical stability was validated by phonon calculations, revealing no significant imaginary frequencies, while ab initio molecular dynamics simulations showed thermal robustness at 300 K. Both monolayers exhibit metallic behavior, dominated by carbon and nitrogen pz$$p_z$$ orbitals near the Fermi level. Optical analysis revealed low reflectance and strong absorption peak at 2.2 eV for h-C9$$_{9}$$N4$$_4$$ and broad absorption within 1.8–3.1 eV for h-C10$$_{10}$$N3$$_3$$, suggesting potential as visible-light absorbers. Mechanical characterization indicated high elastic stiffness (Young’s modulus, 71-77 N/m), substantial shear resistance (23–25 N/m), and isotropic mechanical behavior (Poisson’s ratio, 0.55). Our findings position these new carbon nitride monolayers as promising candidates for flexible electronic devices, photodetection, and optoelectronic applications.MethodsFirst principles were performed using density functional theory (DFT) as implemented in VASP. The PBE functional with PAW pseudopotentials was employed, with a plane-wave cutoff of 520 eV. Thermal stability was assessed by ab initio molecular dynamics (AIMD) simulations at 300 K.
dc.description.affiliationModeling and Molecular Simulation Group, School of Sciences, São Paulo State University, 17033-360, Bauru, SP, Brazil
dc.description.affiliationDepartment of Applied Physics and Center for Computational Engineering and Sciences, State University of Campinas, 13083-859, Campinas, SP, Brazil
dc.description.affiliationComputational Materials Laboratory, LCCMat, Institute of Physics, University of Brasília, 70910-900, Brasília, DF, Brazil
dc.description.affiliationUnespModeling and Molecular Simulation Group, School of Sciences, São Paulo State University, 17033-360, Bauru, SP, Brazil
dc.identifierhttps://app.dimensions.ai/details/publication/pub.1194925565
dc.identifier.dimensionspub.1194925565
dc.identifier.doi10.1007/s00894-025-06569-4
dc.identifier.issn1610-2940
dc.identifier.issn0948-5023
dc.identifier.orcid0000-0003-4699-5886
dc.identifier.orcid0000-0001-7653-0428
dc.identifier.orcid0000-0001-5048-0696
dc.identifier.orcid0000-0001-7468-2946
dc.identifier.orcid0000-0002-5217-7145
dc.identifier.pmid41222730
dc.identifier.urihttps://hdl.handle.net/11449/322633
dc.publisherSpringer Nature
dc.relation.ispartofJournal of Molecular Modeling; n. 12; v. 31; p. 328
dc.rights.accessRightsAcesso restritopt
dc.rights.sourceRightsclosed
dc.sourceDimensions
dc.titleElectronic, optical, and mechanical properties of novel h-C10N3 and h-C9N4 carbon nitride monolayers from first principles
dc.typeArtigopt
dspace.entity.typePublication
relation.isOrgUnitOfPublicationaef1f5df-a00f-45f4-b366-6926b097829b
relation.isOrgUnitOfPublication.latestForDiscoveryaef1f5df-a00f-45f4-b366-6926b097829b
unesp.campusUniversidade Estadual Paulista (UNESP), Faculdade de Ciências, Baurupt

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