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Publicação:
Impact of defects on the electrical properties of BiFeO3 thin films

dc.contributor.authorReis, S. P. [UNESP]
dc.contributor.authorAraujo, E. B. [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionFed Inst Educ Sci & Technol Sao Paulo
dc.date.accessioned2020-12-10T19:56:02Z
dc.date.available2020-12-10T19:56:02Z
dc.date.issued2020-02-17
dc.description.abstractThe impact of defects on the electrical properties of bismuth ferrite thin films has been studied. Secondary phases and oxygen vacancies were the main defects considered. Thin films with secondary phases show higher conductivities than single-phase films. Monophasic films annealed in oxygen atmosphere shows lower conductivity than the non-annealed film. For selected thin film with secondary phase, the relaxation in the grain boundary was predominant with activation energy eV, suggesting the first ionization oxygen vacancies as the relaxation mechanism in the studied films. The electric field effect on relaxation processes was similarly to Arrhenius thermally activated process.en
dc.description.affiliationSao Paulo State Univ, Dept Phys & Chem, Ilha Solteira, Brazil
dc.description.affiliationFed Inst Educ Sci & Technol Sao Paulo, Votuporanga, Brazil
dc.description.affiliationUnespSao Paulo State Univ, Dept Phys & Chem, Ilha Solteira, Brazil
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipIdFAPESP: 2017/13769-1
dc.description.sponsorshipIdCNPq: 304604/2015-1
dc.format.extent70-78
dc.identifierhttp://dx.doi.org/10.1080/00150193.2020.1713344
dc.identifier.citationFerroelectrics. Abingdon: Taylor & Francis Ltd, v. 556, n. 1, p. 70-78, 2020.
dc.identifier.doi10.1080/00150193.2020.1713344
dc.identifier.issn0015-0193
dc.identifier.urihttp://hdl.handle.net/11449/196782
dc.identifier.wosWOS:000526426500011
dc.language.isoeng
dc.publisherTaylor & Francis Ltd
dc.relation.ispartofFerroelectrics
dc.sourceWeb of Science
dc.subjectDefects
dc.subjectbismuth ferrite
dc.subjectthin films
dc.titleImpact of defects on the electrical properties of BiFeO3 thin filmsen
dc.typeArtigo
dcterms.licensehttp://journalauthors.tandf.co.uk/permissions/reusingOwnWork.asp
dcterms.rightsHolderTaylor & Francis Ltd
dspace.entity.typePublication
unesp.departmentFísica e Química - FEISpt

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