Amorphous lead titanate: A new wide-band gap semiconductor with photoluminescence at room temperature
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This paper describes a new amorphous wide-band gap semiconductor with photoluminescence (PL) at room temperature. The amorphous PbTiO3 was prepared by a sol-gel-like process in powder and thin film form. The optical property and the PL behaviour showed a direct relation to the amorphous structure. The PL peak energy can be controlled by the change of the exciting surge energy. Copyright © 2000 John Wiley & Sons, Ltd.
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Advanced Functional Materials, v. 10, n. 6, p. 235-240, 2000.
