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Amorphous lead titanate: A new wide-band gap semiconductor with photoluminescence at room temperature

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dc.contributor.authorLeite, E. R.
dc.contributor.authorPontes, F. M.
dc.contributor.authorParis, E. C.
dc.contributor.authorPaskocimas, C. A. [UNESP]
dc.contributor.authorLee, E. J.H.
dc.contributor.authorLongo, E.
dc.contributor.authorPizani, P. S.
dc.contributor.authorVarela, J. A. [UNESP]
dc.contributor.authorMastelaro, V.
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.date.accessioned2022-04-29T08:46:57Z
dc.date.available2022-04-29T08:46:57Z
dc.date.issued2000-01-01
dc.description.abstractThis paper describes a new amorphous wide-band gap semiconductor with photoluminescence (PL) at room temperature. The amorphous PbTiO3 was prepared by a sol-gel-like process in powder and thin film form. The optical property and the PL behaviour showed a direct relation to the amorphous structure. The PL peak energy can be controlled by the change of the exciting surge energy. Copyright © 2000 John Wiley & Sons, Ltd.en
dc.description.affiliationLIEC Department of Chemistry UFSCar Federal University of São Carlos, São Carlos, SP
dc.description.affiliationDepartment of Physics UFSCar Federal University of São Carlos, São Carlos, SP
dc.description.affiliationInstitute of Chemistry UNESP São Paulo State University, Araraquara, SP
dc.description.affiliationIFSC São Carlos Institute of Physics USP University of São Paulo, São Carlos, SP
dc.description.affiliationUnespInstitute of Chemistry UNESP São Paulo State University, Araraquara, SP
dc.format.extent235-240
dc.identifierhttp://dx.doi.org/10.1002/1099-0712(200011/12)10:6<235
dc.identifier.citationAdvanced Functional Materials, v. 10, n. 6, p. 235-240, 2000.
dc.identifier.doi10.1002/1099-0712(200011/12)10:6<235
dc.identifier.issn1616-301X
dc.identifier.scopus2-s2.0-0034316387
dc.identifier.urihttp://hdl.handle.net/11449/231698
dc.language.isoeng
dc.relation.ispartofAdvanced Functional Materials
dc.sourceScopus
dc.subjectAmorphous materials
dc.subjectLuminescence
dc.subjectMaterials science
dc.subjectSemiconductors
dc.subjectSol-gel process
dc.titleAmorphous lead titanate: A new wide-band gap semiconductor with photoluminescence at room temperatureen
dc.typeArtigo
dspace.entity.typePublication
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentFísico-Química - IQARpt

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Araraquara - IQAR - Instituto de Química