Effective aspect-ratio and gate-capacitance in circular geometry MOS transistors

Publicação:
Effective aspect-ratio and gate-capacitance in circular geometry MOS transistors

dc.contributor.author	DeLima, J. A.
dc.contributor.institution	Universidade Estadual Paulista (Unesp)
dc.date.accessioned	2014-05-20T15:27:59Z
dc.date.available	2014-05-20T15:27:59Z
dc.date.issued	1996-10-01
dc.description.affiliation	UNIV ESTADUAL PAULISTA,DEPT ELECT ENGN,BR-12500000 GUARATINGUETA,SP,BRAZIL
dc.description.affiliationUnesp	UNIV ESTADUAL PAULISTA,DEPT ELECT ENGN,BR-12500000 GUARATINGUETA,SP,BRAZIL
dc.format.extent	1524-1525
dc.identifier	http://dx.doi.org/10.1016/0038-1101(96)00043-3
dc.identifier.citation	Solid-state Electronics. Oxford: Pergamon-Elsevier B.V., v. 39, n. 10, p. 1524-1525, 1996.
dc.identifier.doi	10.1016/0038-1101(96)00043-3
dc.identifier.issn	0038-1101
dc.identifier.uri	http://hdl.handle.net/11449/37896
dc.identifier.wos	WOS:A1996VJ86600019
dc.language.iso	eng
dc.publisher	Elsevier B.V.
dc.relation.ispartof	Solid-state Electronics
dc.relation.ispartofjcr	1.666
dc.relation.ispartofsjr	0,492
dc.rights.accessRights	Acesso restrito
dc.source	Web of Science
dc.title	Effective aspect-ratio and gate-capacitance in circular geometry MOS transistors	en
dc.type	Artigo
dcterms.license	http://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolder	Elsevier B.V.
dspace.entity.type	Publication
unesp.campus	Universidade Estadual Paulista (UNESP), Faculdade de Engenharia, Guaratinguetá	pt
unesp.department	Engenharia Elétrica - FEG	pt

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