Magnetic characteristics of nanocrystalline GaMnN films deposited by reactive sputtering
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The magnetic characteristics of Ga1-xMnxN nanocrystalline films (x = 0.08 and x = 0.18), grown by reactive sputtering onto amorphous silica substrates (a-SiO2), are shown. Further than the dominant paramagnetic-like behaviour, both field- and temperature-dependent magnetization curves presented some particular features indicating the presence of secondary magnetic phases. A simple and qualitative analysis based on the Brillouin function assisted the interpretation of these secondary magnetic contributions, which were tentatively attributed to antiferromagnetic and ferromagnetic phases. © 2012 Elsevier Masson SAS. All rights reserved.
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Diluted magnetic semiconductor , GaMnN , Magnetic properties , Nanocrystalline material , Sputtering , Amorphous silica , Antiferromagnetics , Brillouin functions , Diluted magnetic semiconductors , Ferromagnetic phasis , Magnetic characteristic , Magnetic contribution , Magnetization curves , Nanocrystalline films , Nanocrystallines , Qualitative analysis , Secondary magnetic phasis , Temperature dependent , Antiferromagnetism , Gallium alloys , Magnetic semiconductors , Manganese , Nanocrystalline materials , Paramagnetism , Semiconducting gallium , Silica , Amorphous films
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Solid State Sciences, v. 17, p. 97-101.
