Magnetic characteristics of nanocrystalline GaMnN films deposited by reactive sputtering
Carregando...
Fontes externas
Fontes externas
Data
Orientador
Coorientador
Pós-graduação
Curso de graduação
Título da Revista
ISSN da Revista
Título de Volume
Editor
Elsevier
Tipo
Artigo
Direito de acesso
Acesso restrito
Fontes externas
Fontes externas
Resumo
The magnetic characteristics of Ga1-xMnxN nanocrystalline films (x = 0.08 and x = 0.18), grown by reactive sputtering onto amorphous silica substrates (a-SiO2), are shown. Further than the dominant paramagnetic-like behaviour, both field- and temperature-dependent magnetization curves presented some particular features indicating the presence of secondary magnetic phases. A simple and qualitative analysis based on the Brillouin function assisted the interpretation of these secondary magnetic contributions, which were tentatively attributed to antiferromagnetic and ferromagnetic phases. © 2012 Elsevier Masson SAS. All rights reserved.
Descrição
Palavras-chave
Diluted magnetic semiconductor GaMnN Magnetic properties Nanocrystalline material Sputtering Amorphous silica Antiferromagnetics Brillouin functions Diluted magnetic semiconductors Ferromagnetic phasis Magnetic characteristic Magnetic contribution Magnetization curves Nanocrystalline films Nanocrystallines Qualitative analysis Secondary magnetic phasis Temperature dependent Antiferromagnetism Gallium alloys Magnetic semiconductors Manganese Nanocrystalline materials Paramagnetism Semiconducting gallium Silica Amorphous films
Idioma
Inglês
Citação
Solid State Sciences, v. 17, p. 97-101.
