Simple Analytical Modelling of an Electronically Tunable Potentiometer and Body Factor Influence
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Institute of Electrical and Electronics Engineers (IEEE)
Institute of Electrical and Electronics Engineers (IEEE)
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This paper presents a simple analytical modelling of a Electronically Tunable Potentiometer (ETP) circuit, made of a pseudo-resistor pair and a feedback mechanism that keeps resistance invariant to common mode voltage. The modelling utilizes the first order quadratic equations for the MOS transistor. In order to validate the analytical model, a Verilog-A model was written using the same MOS equations, and later matched to the ibm 130nm technology node resulting in a satisfactory approximation, with relative errors within 15%. Analysis of the ETP control voltage, pseudo-resistor current and pseudo-resistor resistance using the simple model were performed as a function of body factor. When the body factor decreases (better gate to channel electrostatic coupling) the pseudo-resistance increases for the same silicon chip area.
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2021 IEEE Latin America Electron Devices Conference (laedc). New York: IEEE, 4 p., 2021.
