Simple Analytical Modelling of an Electronically Tunable Potentiometer and Body Factor Influence
Carregando...
Arquivos
Fonte externa
Fonte externa
Data
Orientador
Coorientador
Pós-graduação
Curso de graduação
Título da Revista
ISSN da Revista
Título de Volume
Editor
Ieee
Tipo
Trabalho apresentado em evento
Direito de acesso
Arquivos
Fonte externa
Fonte externa
Resumo
This paper presents a simple analytical modelling of a Electronically Tunable Potentiometer (ETP) circuit, made of a pseudo-resistor pair and a feedback mechanism that keeps resistance invariant to common mode voltage. The modelling utilizes the first order quadratic equations for the MOS transistor. In order to validate the analytical model, a Verilog-A model was written using the same MOS equations, and later matched to the ibm 130nm technology node resulting in a satisfactory approximation, with relative errors within 15%. Analysis of the ETP control voltage, pseudo-resistor current and pseudo-resistor resistance using the simple model were performed as a function of body factor. When the body factor decreases (better gate to channel electrostatic coupling) the pseudo-resistance increases for the same silicon chip area.
Descrição
Palavras-chave
Analytical Model, ETP, Body factor, Technological Nodes
Idioma
Inglês
Citação
2021 IEEE Latin America Electron Devices Conference (laedc). New York: IEEE, 4 p., 2021.
