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Temperature and stoichiometry effect on microstructural and ferroelectric properties of Pb(Zr1-xTix)O3 thin films prepared by chemical soulution deposition

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dc.contributor.authorFoschini, C. R.
dc.contributor.authorLi, J. F.
dc.contributor.authorSuchicital, C. T A
dc.contributor.authorViehland, D.
dc.contributor.authorStojanovic, B. D. [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionVirginia Polytechnic Institute and State University
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-27T11:21:05Z
dc.date.available2014-05-27T11:21:05Z
dc.date.issued2004-05-10
dc.description.abstractLead zirconate titanate (PZT) solutions were prepared using a polymeric precursor method, Zr n-propoxide and Ti i-propoxide were used as starting materials with ethylene glycol and water as solvents. The PZT solution was spin-coated on Pt/Ti/SiO2/Si substrates, baked on a hot plate, and finally heat-treated in a tube furnace between 400 and 800°C. The surface morphology and grain size of the films were characterized by atomic force microscopy (AFM), using a tapping mode with amplitude modulation. The films, thermal annealed at temperatures higher than 500°C, exhibited a dense microstructure, without noticeable cracks or voids. Electrical properties were investigated as a function of composition and annealing temperature.en
dc.description.affiliationVirginia Polytech. Inst./Stt. Univ. 213 Holden Hall, Blacksburg, VA 24061
dc.description.affiliationInstitute of Chemistry UNESP, C.P. 355, Araraquara, SP, 14801-970
dc.description.affiliationUnespInstitute of Chemistry UNESP, C.P. 355, Araraquara, SP, 14801-970
dc.format.extent245-251
dc.identifier.citationCeramic Transactions, v. 150, p. 245-251.
dc.identifier.lattes1922357184842767
dc.identifier.orcid0000-0003-1300-4978
dc.identifier.scopus2-s2.0-2142816540
dc.identifier.urihttp://hdl.handle.net/11449/67737
dc.language.isoeng
dc.relation.ispartofCeramic Transactions
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.subjectAmplitude modulation
dc.subjectAnnealing
dc.subjectAtomic force microscopy
dc.subjectCharacterization
dc.subjectComposition
dc.subjectFerroelectricity
dc.subjectLead compounds
dc.subjectMicrostructure
dc.subjectOrganic solvents
dc.subjectPolyethylene glycols
dc.subjectSilica
dc.subjectStoichiometry
dc.subjectAnnealing temperatures
dc.subjectDense microstructures
dc.subjectElectromechanical response
dc.subjectThin films
dc.titleTemperature and stoichiometry effect on microstructural and ferroelectric properties of Pb(Zr1-xTix)O3 thin films prepared by chemical soulution depositionen
dc.typeTrabalho apresentado em evento
dspace.entity.typePublication
unesp.author.lattes1922357184842767[1]
unesp.author.orcid0000-0003-1300-4978[1]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentFísico-Química - IQARpt

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Araraquara - IQAR - Instituto de Química