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Characterization of lanthanum-doped bismuth titanate thin films prepared by polymeric precursor method

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dc.contributor.authorSimoes, A. Z.
dc.contributor.authorRiccardi, C. S.
dc.contributor.authorMoura, F.
dc.contributor.authorRies, A.
dc.contributor.authorJunior, NLA
dc.contributor.authorZaghete, M. A.
dc.contributor.authorStojanovic, B.
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversity of Belgrade
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.date.accessioned2014-05-20T14:18:07Z
dc.date.available2014-05-20T14:18:07Z
dc.date.issued2004-09-01
dc.description.abstractLanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), with x ranging from 0 to 0.75 was grown on Pt/Ti/SiO2/Si substrates using a polymeric precursor solution and spin-coating method. The dielectric constant of highly doped bismuth titanate was equal to 148 while dielectric losses remained low (tan delta = 0.0018), and the films showed well-saturated polarization-electric field curves (2P(r) = 40.6 muC/cm(2) and V-c = 0.99 V). The leakage current densities improve for the lanthanum-doped system. For five-layered BLT films with x = 0.75, a charge storage density of 35 fC/mum(2) and a thickness of 320 nm were found. (C) 2004 Elsevier B.V. All rights reserved.en
dc.description.affiliationUniv Estadual Paulista, Inst Chem, Dept Chem Phys, BR-14801970 Araraquara, SP, Brazil
dc.description.affiliationUniv Belgrade, Ctr Multidisciplinary Studies, Belgrade, Yugoslavia
dc.description.affiliationUniv Fed Sao Carlos, Dept Chem, BR-13565905 Sao Carlos, SP, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, Inst Chem, Dept Chem Phys, BR-14801970 Araraquara, SP, Brazil
dc.format.extent2842-2847
dc.identifierhttp://dx.doi.org/10.1016/j.matlet.2004.04.025
dc.identifier.citationMaterials Letters. Amsterdam: Elsevier B.V., v. 58, n. 22-23, p. 2842-2847, 2004.
dc.identifier.doi10.1016/j.matlet.2004.04.025
dc.identifier.issn0167-577X
dc.identifier.urihttp://hdl.handle.net/11449/25461
dc.identifier.wosWOS:000223164200030
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofMaterials Letters
dc.relation.ispartofjcr2.687
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectcrystal structurept
dc.subjectdielectricspt
dc.subjectferroelectricspt
dc.subjectthin filmspt
dc.titleCharacterization of lanthanum-doped bismuth titanate thin films prepared by polymeric precursor methoden
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
dspace.entity.typePublication
unesp.author.lattes3573363486614904[1]
unesp.author.lattes0173401604473200[2]
unesp.author.orcid0000-0003-2535-2187[1]
unesp.author.orcid0000-0003-2192-5312[2]
unesp.campusUniversidade Estadual Paulista (UNESP), Instituto de Química, Araraquarapt
unesp.departmentFísico-Química - IQARpt

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Araraquara - IQAR - Instituto de Química