Publicação: Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeO3 thin films
dc.contributor.author | Biasotto, Glenda [UNESP] | |
dc.contributor.author | Moura, Francisco | |
dc.contributor.author | Foschini, César [UNESP] | |
dc.contributor.author | Silva, Elson Longo da [UNESP] | |
dc.contributor.author | Varela, José Arana [UNESP] | |
dc.contributor.author | Simões, Alexandre Zirpoli [UNESP] | |
dc.contributor.institution | Universidade Estadual Paulista (Unesp) | |
dc.contributor.institution | Universidade Federal de Itajubá (UNIFEI) | |
dc.date.accessioned | 2015-05-15T13:30:14Z | |
dc.date.available | 2015-05-15T13:30:14Z | |
dc.date.issued | 2011 | |
dc.description.abstract | Bi0.85La0.15FeO3 (BLFO) thin films were deposited on Pt(111)/Ti/SiO2 /Si substrates by the soft chemical method. Films with thicknesses ranging from 140 to 280 nm were grown on platinum coated silicon substrates at 500°C for 2 hours. The X-ray diffraction analysis of BLFO films evidenced a hexagonal structure over the entire thickness range investigated. The grain size of the film changes as the number of the layers increases, indicating thickness dependence. It is found that the piezoelectric response is strongly influenced by the film thickness. It is shown that the properties of BiFeO3 thin films, such as lattice parameter, dielectric permittivity, piezoeletric coefficient etc., are functions of misfit strains. | en |
dc.description.affiliation | Universidade Estadual Paulista Júlio de Mesquita Filho, Departamento de Bioquímica e Tecnologia Química, Instituto de Química de Araraquara, Araraquara, Rua Francisco Degni, 55, Quitandinha, CEP 14801907, SP, Brasil | |
dc.description.affiliationUnesp | Universidade Estadual Paulista Júlio de Mesquita Filho, Departamento de Bioquímica e Tecnologia Química, Instituto de Química de Araraquara | |
dc.description.affiliationUnesp | Universidade Estadual Paulista Júlio de Mesquita Filho, Faculdade de Engenharia de Itabira | |
dc.description.sponsorship | Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) | |
dc.description.sponsorship | Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) | |
dc.description.sponsorship | Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) | |
dc.format.extent | 31-39 | |
dc.identifier | http://www.tf.uns.ac.rs/publikacije/PAC/tablesofcontents.html | |
dc.identifier.citation | Processing and Application of Ceramics, v. 5, n. 1, p. 31-39, 2011. | |
dc.identifier.doi | 10.2298/PAC1101031B | |
dc.identifier.file | ISSN1820-6131-2011-05-01-31-39.pdf | |
dc.identifier.issn | 1820-6131 | |
dc.identifier.lattes | 9330470036613511 | |
dc.identifier.lattes | 1922357184842767 | |
dc.identifier.lattes | 8161025003780724 | |
dc.identifier.lattes | 1807399214239200 | |
dc.identifier.lattes | 3573363486614904 | |
dc.identifier.lattes | 9848311210578810 | |
dc.identifier.orcid | 0000-0003-1300-4978 | |
dc.identifier.uri | http://hdl.handle.net/11449/123457 | |
dc.language.iso | eng | |
dc.relation.ispartof | Processing and Application of Ceramics | |
dc.relation.ispartofjcr | 1.152 | |
dc.relation.ispartofsjr | 0,318 | |
dc.rights.accessRights | Acesso aberto | |
dc.source | Currículo Lattes | |
dc.subject | Thin films | en |
dc.subject | Oxides | en |
dc.subject | Chemical synthesis | en |
dc.subject | Piezoelectricity | en |
dc.title | Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeO3 thin films | en |
dc.type | Artigo | |
dspace.entity.type | Publication | |
unesp.author.lattes | 9330470036613511 | |
unesp.author.lattes | 8161025003780724 | |
unesp.author.lattes | 1807399214239200 | |
unesp.author.lattes | 3573363486614904 | |
unesp.author.lattes | 9848311210578810 | |
unesp.author.lattes | 1922357184842767[3] | |
unesp.author.orcid | 0000-0003-1300-4978[3] | |
unesp.campus | Universidade Estadual Paulista (UNESP), Instituto de Química, Araraquara | pt |
unesp.department | Bioquímica e Tecnologia Química - IQ | pt |
unesp.department | Materiais e Tecnologia - FEG | pt |
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