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ac conductivity and conduction mechanism of NaNbO3 semiconductor antiferroelectric ceramic: A relaxational approach at high temperature

dc.contributor.authorNobre, MAL
dc.contributor.authorLanfredi, S.
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:20:41Z
dc.date.available2014-05-20T15:20:41Z
dc.date.issued2003-10-13
dc.description.abstractThe electric properties of the sodium niobate perovskite ceramic were investigated by impedance spectroscopy in the frequency range from 5 Hz to 13 MHz and from room temperature up to 1073 K, in a thermal cycle. Both capacitance and conductivity exhibit an anomaly at around 600 K as a function of the temperature and frequency. The electric conductivity as a function of angular frequency sigma(omega) follows the relation sigma(omega)=Aomega(s). The values of the exponent s lie in the range 0.15less than or equal tosless than or equal to0.44. These results were discussed considering the conduction mechanism as being a type of polaron hopping. (C) 2003 American Institute of Physics.en
dc.description.affiliationUniv Estadual Paulista, Fac Ciências & Tecnol, BR-19060900 Presidente Prudente, SP, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, Fac Ciências & Tecnol, BR-19060900 Presidente Prudente, SP, Brazil
dc.format.extent3102-3104
dc.identifierhttp://dx.doi.org/10.1063/1.1618016
dc.identifier.citationApplied Physics Letters. Melville: Amer Inst Physics, v. 83, n. 15, p. 3102-3104, 2003.
dc.identifier.doi10.1063/1.1618016
dc.identifier.fileWOS000185832400038.pdf
dc.identifier.issn0003-6951
dc.identifier.lattes7201928600704530
dc.identifier.urihttp://hdl.handle.net/11449/31931
dc.identifier.wosWOS:000185832400038
dc.language.isoeng
dc.publisherAmerican Institute of Physics (AIP)
dc.relation.ispartofApplied Physics Letters
dc.relation.ispartofjcr3.495
dc.relation.ispartofsjr1,382
dc.rights.accessRightsAcesso aberto
dc.sourceWeb of Science
dc.titleac conductivity and conduction mechanism of NaNbO3 semiconductor antiferroelectric ceramic: A relaxational approach at high temperatureen
dc.typeArtigo
dcterms.licensehttp://publishing.aip.org/authors/web-posting-guidelines
dcterms.rightsHolderAmer Inst Physics
dspace.entity.typePublication
unesp.author.lattes7201928600704530
unesp.author.orcid0000-0003-4843-3975[1]
unesp.campusUniversidade Estadual Paulista (UNESP), Faculdade de Ciências e Tecnologia, Presidente Prudentept
unesp.departmentFísica, Química e Biologia - FCTpt

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