Effect of ion irradiation on the structural properties and hardness of a-C:H:Si:O:F films
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2015-01-01
Autores
Rangel, Elidiane Cipriano [UNESP]
Cruz, Nilson Cristino da [UNESP]
Range, Rita de Cássia Cipriano [UNESP]
Landers, Richard
Durrant, Steven Frederick [UNESP]
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Iop Publishing Ltd
Resumo
Amorphous carbon-based thin films, a-C:H:Si:O:F, were obtained by plasma immersion ion implantation and deposition (PIIID) from mixtures of hexamethyldisiloxane, sulfur hexafluoride and argon. For PIIID the sample holder was biased with negative 25 kV pulses at 60 Hz. The main system parameter was the proportion of SF6 in the reactor feed, R-SF. To allow comparison to growth without intentional ion implantation, some films were also grown by plasma enhanced chemical vapor deposition (PECVD). The objectives were to investigate the effects of fluorine incorporation and ion implantation on the film's chemical structure, and principally on the surface contact angle, hardness and friction coefficient. Infrared and X-ray photo-electron spectroscopic analyses revealed that the films are essentially amorphous and polymer-like, and that fluorine is incorporated for any non-zero value of R-SF. Choice of R-SF influences film composition and structure but ion implantation also plays a role. Depending on R-SF, hydrophilic or hydrophobic films may be produced. Ion implantation is beneficial while fluorine incorporation is detrimental to hardness. For ion implanted films the friction coefficient falls about one third as R-SF is increased from 0 to 60%. Films prepared by PIIID without fluorine incorporation present fairly low friction coefficients and hardnesses greater than those of conventional polymers.
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15th Latin American Workshop On Plasma Physics (LAWPP 2014). Bristol: Iop Publishing Ltd, v. 591, p. 1-14, 2015.