The conduction mechanisms analysis of AlGaN/GaN MOSHEMTs with different source/drain electrode configurations
Carregando...
Data
Orientador
Coorientador
Pós-graduação
Curso de graduação
Título da Revista
ISSN da Revista
Título de Volume
Editor
Tipo
Trabalho apresentado em evento
Direito de acesso
Resumo
In this work, an Al2O3/AlGaN/AlN/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT) is analyzed and the investigation of its conduction mechanisms is carried out considering different gate to source and gate to drain distances, as well as different source and drain contact depths. The devices can have up to 3 conduction channels, of which two of them are related to the 2DEG formation and one of them depends on field effect on MOS structure. While the HEMT conduction is more influenced by the source and drain contacts depth, the MOS conduction seems to be more affected by the gate to source and gate to drain distances. Each of these conductions influence the total drain current in a different way.
Descrição
Palavras-chave
2deg, Algan, Aln, Double conduction mechanisms, Moshemt
Idioma
Inglês
Citação
SBMicro 2021 - 35th Symposium on Microelectronics Technology and Devices.
