Numerical simulation of magnetic-field-enhanced plasma immersion ion implantation in cylindrical geometry
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Data
2006-08-01
Autores
Kostov, Konstantin G.
Barroso, Joaquim J.
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Editor
Institute of Electrical and Electronics Engineers (IEEE)
Resumo
Recent studies have demonstrated that the sheath dynamics in plasma immersion ion implantation (PIII) is significantly affected by an external magnetic field. In this paper, a two-dimensional computer simulation of a magnetic-field-enhanced PHI system is described. Negative bias voltage is applied to a cylindrical target located on the axis of a grounded vacuum chamber filled with uniform molecular nitrogen plasma. A static magnetic field is created by a small coil installed inside the target holder. The vacuum chamber is filled with background nitrogen gas to form a plasma in which collisions of electrons and neutrals are simulated by the Monte Carlo algorithm. It is found that a high-density plasma is formed around the target due to the intense background gas ionization by the magnetized electrons drifting in the crossed E x B fields. The effect of the magnetic field intensity, the target bias, and the gas pressure on the sheath dynamics and implantation current of the PHI system is investigated.
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Palavras-chave
ion implantation, magnetic field effects, plasma materials processing applications, plasma sheaths
Como citar
IEEE Transactions on Plasma Science. Piscataway: IEEE-Inst Electrical Electronics Engineers Inc., v. 34, n. 4, p. 1127-1135, 2006.