Er-doped silica-based waveguides prepared by different techniques: RF-sputtering, sol-gel and ion-exchange
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Data
2002-12-01
Autores
Righini, G. C.
Pelli, S.
Ferrari, M.
Armellini, C.
Zampedri, L.
Tosello, C.
Ronchin, S.
Rolli, R.
Moser, E.
Montagna, M.
Título da Revista
ISSN da Revista
Título de Volume
Editor
Kluwer Academic Publ
Resumo
Erbium-activated silica-based planar waveguides were prepared by three different technological routes: RF-sputtering, sol-gel and ion exchange. Various parameters of preparation were varied in order to optimize the waveguides for operation in the NIR region. Particular attention was devoted to the minimization of the losses and the increase of the luminescence efficiency of the metastable I-4(13/2) state of the Er3+ ion. Waveguide properties were determined by m-line spectroscopy and loss measurements. Waveguide Raman and luminescence spectroscopy were used to obtain information about the structure of the prepared films and about the dynamical processes related to the luminescence of the Er3+ ions.
Descrição
Palavras-chave
dip-coating, erbium, ion-exchange, luminescence spectroscopy, optical amplification, optical waveguides, Raman spectroscopy, RF-sputtering, silicate glasses, upconversion
Como citar
Optical and Quantum Electronics. Dordrecht: Kluwer Academic Publ, v. 34, n. 12, p. 1151-1166, 2002.