LiNbO3 thin films prepared from a polymeric precursor method
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Data
1997-12-01
Autores
Bouquet, V.
Leite, E. R.
Longo, Elson [UNESP]
Varela, José Arana [UNESP]
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Resumo
LiNbO3 thin films were prepared from polymeric precursor method by dip coating. The precursor films, deposited on Si(111) substrates, were heat-treated from 400°C to 900°C in order to study the heat treatment influence on the crystallinity and microstructure of the final film. The X-ray diffraction patterns showed, in particular, that these films crystallize at low temperature (450°C) and present no preferential orientation. The scanning electron microscopy studies showed that the film microstructure is strongly influenced by the annealing temperature. © 1997 Trans Tech Publications.
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Ferroelectrics, Lithium niobate, Pechini, Thin films, Annealing, Crystal microstructure, Crystal orientation, Crystallization, Ferroelectric materials, Scanning electron microscopy, Semiconducting silicon, Substrates, X ray diffraction analysis, Polymeric precursor method, Lithium compounds
Como citar
Key Engineering Materials, n. 136 PART 2, p. 1143-1146, 1997.