An accurate low-voltage analog memory-cell with built-in multiplication
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Data
2001-01-01
Autores
De Lima, J. A. [UNESP]
Cordeiro, A. S. [UNESP]
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Resumo
A CMOS memory-cell for dynamic storage of analog data and suitable for LVLP applications is proposed. Information is memorized as the gate-voltage of input-transistor of a gain-boosting triode-transconductor. The enhanced output-resistance improves accuracy on reading out the sampled currents. Additionally, a four-quadrant multiplication between the input to regulation-amplifier of the transconductor and the stored voltage is provided. Designing complies with a low-voltage 1.2μm N-well CMOS fabrication process. For a 1.3V-supply, CCELL=3.6pF and sampling interval is 0.25μA≤ ISAMPLE ≤ 0.75μA. The specified retention time is 1.28ms and corresponds to a charge-variation of 1% due to junction leakage @75°C. A range of MR simulations confirm circuit performance. Absolute read-out error is below O.40% while the four-quadrant multiplier nonlinearity, at full-scale is 8.2%. Maximum stand-by consumption is 3.6μW/cell.
Descrição
Palavras-chave
Analog storage, Buffer storage, Computer simulation, Gates (transistor), Learning algorithms, Printed circuit design, Transconductance, Analog memory cells, CMOS integrated circuits
Como citar
Proceedings - IEEE International Symposium on Circuits and Systems, v. 1, p. 101-104.