Sol-Gel Erbium-Doped Silica-Hafnia Planar and Channel Waveguides
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Data
2003-11-27
Autores
Gonçalves, Rogéria R.
Carturan, Giovanni
Zampedri, Luca
Ferrari, Maurizio
Armellini, Cristina
Chiasera, Alessandro
Mattarelli, M.
Moser, Enrico
Montagna, Maurizio
Righini, Giancarlo C.
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Resumo
Erbium activated SiO2 -HfO2 planar waveguides, doped with Er3+ concentrations ranging from 0.01 to 4 mol%, were prepared by sol-gel method. The films were deposited on v-SiO2 and silica-on-silicon substrates using dip-coating technique. The waveguides show high densification degree, effective intermingling of the two film components, and uniform surface morphology. The waveguide deposited on silica-on-silicon substrates shows one single propagation mode at 1.5μm, with a confinement coefficient of 0.81 and an attenuation coefficient of 0.8 dB/cm at 632.8nm. Emission in the C-telecommunication band was observed at room temperature for all the samples upon continuouswave excitation at 980 nm or 514.5 nm. The shape of the emission band corresponding to the 4I13/2 → 4I15/2 transition is found to be almost independent both on erbium content and excitation wavelength, with a FWHM between 44 and 48 nm. The 4I13/2 level decay curves presented a single-exponential profile, with a lifetime ranging between 1.1 - 6.6 ms, depending on the erbium concentration. Infrared to visible upconversion luminescence upon continuous-wave excitation at 980 nm was observed for all the samples. Channel waveguide in rib configuration was obtained by etching the active film in order to have a well confined mode at 1.5 μm.
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Channel waveguides, Erbium, Luminescence, Silica-hafnia, Sol-gel planar waveguides, Deposition, Etching, Morphology, Semiconductor doping, Silicon wafers, Sol-gels, Substrates, Wavelength division multiplexing, Planar waveguides, Optical waveguides
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Proceedings of SPIE - The International Society for Optical Engineering, v. 4990, p. 111-120.