Magnetic characteristics of nanocrystalline GaMnN films deposited by reactive sputtering
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Data
2013-01-29
Autores
Leite, D. M G [UNESP]
Pereira, A. L J [UNESP]
Iwamoto, W. A.
Pagliuso, P. G.
Lisboa Filho, Paulo Noronha [UNESP]
Silva, José Humberto Dias da [UNESP]
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Resumo
The magnetic characteristics of Ga1-xMnxN nanocrystalline films (x = 0.08 and x = 0.18), grown by reactive sputtering onto amorphous silica substrates (a-SiO2), are shown. Further than the dominant paramagnetic-like behaviour, both field- and temperature-dependent magnetization curves presented some particular features indicating the presence of secondary magnetic phases. A simple and qualitative analysis based on the Brillouin function assisted the interpretation of these secondary magnetic contributions, which were tentatively attributed to antiferromagnetic and ferromagnetic phases. © 2012 Elsevier Masson SAS. All rights reserved.
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Diluted magnetic semiconductor, GaMnN, Magnetic properties, Nanocrystalline material, Sputtering, Amorphous silica, Antiferromagnetics, Brillouin functions, Diluted magnetic semiconductors, Ferromagnetic phasis, Magnetic characteristic, Magnetic contribution, Magnetization curves, Nanocrystalline films, Nanocrystallines, Qualitative analysis, Secondary magnetic phasis, Temperature dependent, Antiferromagnetism, Gallium alloys, Magnetic semiconductors, Manganese, Nanocrystalline materials, Paramagnetism, Semiconducting gallium, Silica, Amorphous films
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Solid State Sciences, v. 17, p. 97-101.