Erbium-activated HfO2-based waveguides for photonics

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dc.contributor.authorGonçalves, Rogeria R.
dc.contributor.authorCarturan, Giovanni
dc.contributor.authorZampedri, Luca
dc.contributor.authorFerrari, Maurizio
dc.contributor.authorMontagna, Maurizio
dc.contributor.authorRighini, Giancarlo C.
dc.contributor.authorPelli, Stefano
dc.contributor.authorRibeiro, Sidney J.L. [UNESP]
dc.contributor.authorMessaddeq, Younes [UNESP]
dc.contributor.institutionUniversité di Trento
dc.contributor.institutionIst. di Fotonica e Nanotecnologie
dc.contributor.institutionUniversità di Trento
dc.contributor.institutionIst. di Fis. Applicata Nello Carrara
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-27T11:20:57Z
dc.date.available2014-05-27T11:20:57Z
dc.date.issued2003-12-01
dc.description.abstract70SiO2 - 30HfO2 planar waveguides, activated by Er3+ concentration ranging from 0.3 to 1 mol%, were prepared by solgel route, using dip-coating deposition on silica glass substrates. The waveguides showed high densification degree, effective intermingling of the two components of the film, and uniform surface morphology. Propagation losses of about 1 dB/cm were measured at 632.8 nm. When pumped with 987 nm or 514.5 nm continuous-wave laser light, the waveguides showed the 4I 13/2→4I15/2 emission band with a bandwidth of 48 nm. The spectral features were found independent both on erbium content and excitation wavelength. The 4I13/2 level decay curves presented a single exponential profile, with a lifetime between 2.9-5.0 ms, depending on the erbium concentration.en
dc.description.affiliationDipto. di Ingegneria dei Materialli Université di Trento, Via Mesiano 77, I-38050 Trento
dc.description.affiliationCNR Ist. di Fotonica e Nanotecnologie, via Sommarie 14, I-38050 Povo, Trento
dc.description.affiliationDipartimento di Fisica INFM Università di Trento, via Sommarie 14, I-38050 Povo, Trento
dc.description.affiliationIst. di Fis. Applicata Nello Carrara, via Panciatichi 64, I-50127 Firenze
dc.description.affiliationInstitute of Chemistry UNESP, P.O.Box 355, 14801-970, Araraquara, SP
dc.description.affiliationUnespInstitute of Chemistry UNESP, P.O.Box 355, 14801-970, Araraquara, SP
dc.format.extent89-90
dc.identifierhttp://dx.doi.org/10.1117/12.524944
dc.identifier.citationProceedings of SPIE - The International Society for Optical Engineering, v. 4829 I, p. 89-90.
dc.identifier.doi10.1117/12.524944
dc.identifier.issn0277-786X
dc.identifier.lattes2998503841917815
dc.identifier.scopus2-s2.0-2342529081
dc.identifier.urihttp://hdl.handle.net/11449/67502
dc.language.isoeng
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineering
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.subjectLuminescence
dc.subjectOptical materials
dc.subjectPlanar waveguides
dc.subjectSilica-hafnia
dc.subjectSol-gel, dip-coating, erbium
dc.subjectAnnealing
dc.subjectBirefringence
dc.subjectDensification
dc.subjectErbium
dc.subjectHafnium compounds
dc.subjectLaser beams
dc.subjectMicrostructure
dc.subjectMorphology
dc.subjectPhotoluminescence
dc.subjectPhotons
dc.subjectRefractive index
dc.subjectSilica
dc.subjectSol-gels
dc.subjectDip-coatings
dc.subjectEmission bands
dc.subjectOptical waveguides
dc.titleErbium-activated HfO2-based waveguides for photonicsen
dc.typeTrabalho apresentado em evento
dcterms.licensehttp://proceedings.spiedigitallibrary.org/ss/TermsOfUse.aspx
unesp.author.lattes2998503841917815
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Química, Araraquarapt

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