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Investigation of electrical properties of tantalum doped SnO2 varistor system

dc.contributor.authorFilho, F. M.
dc.contributor.authorSimoes, A. Z.
dc.contributor.authorRies, A.
dc.contributor.authorSouza, E. C.
dc.contributor.authorPerazolli, L.
dc.contributor.authorCilense, M.
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.date.accessioned2014-05-20T15:29:08Z
dc.date.available2014-05-20T15:29:08Z
dc.date.issued2005-01-01
dc.description.abstractTa2O5 doped SnO2 varistor systems containing 0.5 mol% ZnO and 0.5 mol% Coo were prepared by mixed oxide method. Considering that ZnO and Coo oxides are densification additives only the SnO(2)center dot ZnO center dot CoO ceramics cannot exhibit electrical nonlinearity. A small amount of Ta2O5 improves the nonlinear properties of the samples greatly. The height and width of the defect barriers were calculated. It was found that samples doped with 0.05 mol% Ta2O5 exhibit the highest density (98.5%), the lowest electric breakdown field (E-b = 1100 V/cm) and the highest coefficient of nonlinearity (alpha = 11.5). The effect of Ta2O5 dopant could be explained by the substitution of Ta5+ by Sn4+. A grain-boundary defect barrier model for the SnO(2)center dot ZnO center dot CoO center dot Ta2O5 varistor system was also introduced. (c) 2004 Elsevier Ltd and Techna Group S.r.l. All rights reserved.en
dc.description.affiliationUNESP, Inst Quim, BR-14800900 Araraquara, SP, Brazil
dc.description.affiliationUFSCar, Lab Interdisciplinar Eletroquim & Ceram, Dept Quim, BR-13565905 Sao Carlos, SP, Brazil
dc.description.affiliationUnespUNESP, Inst Quim, BR-14800900 Araraquara, SP, Brazil
dc.format.extent399-404
dc.identifierhttp://dx.doi.org/10.1016/j.ceramint.2004.06.004
dc.identifier.citationCeramics International. Oxford: Elsevier B.V., v. 31, n. 3, p. 399-404, 2005.
dc.identifier.doi10.1016/j.ceramint.2004.06.004
dc.identifier.issn0272-8842
dc.identifier.lattes9128353103083394
dc.identifier.lattes3892896473273324
dc.identifier.orcid0000-0001-7083-5626
dc.identifier.urihttp://hdl.handle.net/11449/38784
dc.identifier.wosWOS:000227603500007
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofCeramics International
dc.relation.ispartofjcr3.057
dc.relation.ispartofsjr0,784
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectvaristorpt
dc.subjecttin dioxidept
dc.subjecttantalum oxidept
dc.titleInvestigation of electrical properties of tantalum doped SnO2 varistor systemen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
unesp.author.lattes9128353103083394
unesp.author.lattes3892896473273324[4]
unesp.author.lattes3573363486614904[2]
unesp.author.orcid0000-0001-7083-5626[4]
unesp.author.orcid0000-0003-2535-2187[2]
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Química, Araraquarapt
unesp.departmentBioquímica e Tecnologia - IQARpt
unesp.departmentFísico-Química - IQARpt

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