Dielectric and fatigue properties of Pb(Zr0.53Ti 0.47)O3 thin films prepared from oxide precursors method

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Fatigue is an important problem to be considered if a ferroelectric film is used for non-volatile memory devices. In this phenomena, the remanent polarization and coercive field properties degrades in cycles which increase in hysteresis loops. The reasons have been attributed to different mechanisms such as a large voltage applied on ferroelectric film in every reading process in Ferroelectric Random Access Memory (FeRAM) or memories for digital storage in computer, grain size effects and others. The aim of this work is to investigate the influence of the crystallization kinetics on dielectric and ferroelectric properties of the Pb(Zr0.53Ti0.47)O3 thin films prepared by an alternative chemical method. Films were crystallized in air on Pt/Ti/SiO2/Si substrates at 700°C for 1 hour, in conventional thermal annealing (CTA), and at 700°C for l min and 700°C 5 min, using a rapid thermal annealing (RTA) process. Final films were crack free and presented an average of 750 nm in thickness. Dielectric properties were studied in the frequency range of 100 Hz - 1 MHz. All films showed a dielectric dispersion at low frequency. Ferroelectric properties were measured from hysteresis loops at 10 kHz. The obtained remanent polarization (Pr) and coercive field (Ec) were 3.7 μC/cm2 and 71.9 kV/cm respectively for film crystallized by CTA while in films crystallized by RTA these parameters were essentially the same. In the fatigue process, the Pr value decreased to 14% from the initial value after 1.3 × 109 switching cycles, for film by CTA, while for film crystallized by RTA for 5 min, Pr decreased to 47% from initial value after 1.7 × 10 9 switching cycles. © 2005 Materials Research Society.





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Materials Research Society Symposium Proceedings, v. 830, p. 171-176.