Unveiling the metal-insulator transition at YTiO3/LaTiO3 interfaces grown by the soft chemical method

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dc.contributor.authorTolentino Cabral, Ana Cristina
dc.contributor.authorTafur Tanta, Urbano Miguel
dc.contributor.authorSimões, Alexandre Zirpoli [UNESP]
dc.contributor.authorBastos, Wagner
dc.contributor.authorMoreno, Henrique [UNESP]
dc.contributor.authorRamirez, Miguel Angel [UNESP]
dc.contributor.authorPonce, Miguel Adolfo
dc.contributor.authorMoura, Francisco
dc.contributor.institutionFederal University of Itajubá
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.contributor.institutionCONICET-Universidad Nacional de Mar del Plata
dc.date.accessioned2023-07-29T16:11:12Z
dc.date.available2023-07-29T16:11:12Z
dc.date.issued2023-07-01
dc.description.abstractIn the last couple of years, perovskites and transition metal oxides have demonstrated high potential for energy storage/processing applications. Oxide interfaces with piezoelectric, magnetic and metal-insulator transition based on YTiO3/LaTiO3 heterostructured films were investigated in this work. The Mott insulator, YTiO3, was deposited onto a Mott insulator, LaTiO3, via polymeric precursor method. Spin coating was performed to obtain a YTiO3/LaTiO3 heterostructed thin films deposited onto Pt/TiO2/SiO2/Si substrates. Structure, morphology, and electrical properties of the films were assessed. The YTiO3/LaTiO3 heterostructures exhibit ferromagnetic and piezoelectric behavior (d33máx≈8.11 p.m./V), which may be attributed to smaller grain (average grain size≈20.00 nm) and, thus, a higher grain boundary density, and stress in the film plane due to the different properties of the interface. The dielectric permittivity and dielectric loss at 1 KHz were found to be 70 and 0.41, respectively. I–V measurements on different electrode areas confirmed a metal-to-insulator transition, indicating a potential aplication in correlated electron random access memory (CeRAM).en
dc.description.affiliationInterdisciplinary Laboratory of Advanced Materials (LIMAv) Federal University of Itajubá, Campus Itabira, 200, Industrial District II
dc.description.affiliationSchool of Engineering and Sciences Guaratinguetá São Paulo State University – UNESP, Guaratinguetá, SP
dc.description.affiliationCDMF LIEC Chemistry Department of the Federal University of São Carlos - (UFSCar), P.O. Box 676, São Carlos, SP
dc.description.affiliationInstituto de Investigaciones en Ciencia y Tecnología de Materiales (INTEMA) CONICET-Universidad Nacional de Mar del Plata, Juan B. Justo 4302
dc.description.affiliationUnespSchool of Engineering and Sciences Guaratinguetá São Paulo State University – UNESP, Guaratinguetá, SP
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de Minas Gerais (FAPEMIG)
dc.description.sponsorshipFinanciadora de Estudos e Projetos
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipIdFAPESP: 2018/18236-4
dc.identifierhttp://dx.doi.org/10.1016/j.matchemphys.2023.127709
dc.identifier.citationMaterials Chemistry and Physics, v. 302.
dc.identifier.doi10.1016/j.matchemphys.2023.127709
dc.identifier.issn0254-0584
dc.identifier.scopus2-s2.0-85152475185
dc.identifier.urihttp://hdl.handle.net/11449/249860
dc.language.isoeng
dc.relation.ispartofMaterials Chemistry and Physics
dc.sourceScopus
dc.subjectMagnetic properties
dc.subjectMetal-insulator transition
dc.subjectPerovskite
dc.subjectPiezoelectric properties
dc.subjectPolymeric precursor method
dc.titleUnveiling the metal-insulator transition at YTiO3/LaTiO3 interfaces grown by the soft chemical methoden
dc.typeArtigo
unesp.author.orcid0000-0003-2535-2187[3]
unesp.departmentMateriais e Tecnologia - FEGpt

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Guaratinguetá - FEG - Faculdade de Engenharia e Ciências