Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

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dc.contributor.authorLourenco, S. A.
dc.contributor.authorDias, IFL
dc.contributor.authorPocas, L. C.
dc.contributor.authorDuarte, J. L.
dc.contributor.authorOliveira, José Brás Barreto de [UNESP]
dc.contributor.authorHarmand, J. C.
dc.contributor.institutionUniversidade Estadual de Londrina (UEL)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionCNRS
dc.date.accessioned2014-05-20T15:29:37Z
dc.date.available2014-05-20T15:29:37Z
dc.date.issued2003-04-15
dc.description.abstractGaAsSbN/GaAs strained-layer single quantum wells grown on a GaAs substrate by molecular-beam epitaxy with different N concentrations were studied using the photoluminescence (PL) technique in the temperature range from 9 to 296 K. A strong redshift in optical transition energies induced by a small increase in N concentration has been observed in the PL spectra. This effect can be explained by the interaction between a narrow resonant band formed by the N-localized states and the conduction band of the host semiconductor. Excitonic transitions in the quantum wells show a successive red/blue/redshift with increasing temperature in the 2-100 K range. The activation energies of nonradiative channels responsible for a strong thermal quenching are deduced from an Arrhenius plot of the integrated PL intensity. (C) 2003 American Institute of Physics.en
dc.description.affiliationUniv Estadual Londrina, Dept Fis, BR-86051970 Londrina, Parana, Brazil
dc.description.affiliationUniv Estadual Paulista, Dept Fis, BR-17033360 São Paulo, Brazil
dc.description.affiliationCNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France
dc.description.affiliationUnespUniv Estadual Paulista, Dept Fis, BR-17033360 São Paulo, Brazil
dc.format.extent4475-4479
dc.identifierhttp://dx.doi.org/10.1063/1.1560574
dc.identifier.citationJournal of Applied Physics. Melville: Amer Inst Physics, v. 93, n. 8, p. 4475-4479, 2003.
dc.identifier.doi10.1063/1.1560574
dc.identifier.fileWOS000181863100015.pdf
dc.identifier.issn0021-8979
dc.identifier.lattes6977466698742311
dc.identifier.urihttp://hdl.handle.net/11449/39158
dc.identifier.wosWOS:000181863100015
dc.language.isoeng
dc.publisherAmerican Institute of Physics (AIP)
dc.relation.ispartofJournal of Applied Physics
dc.relation.ispartofjcr2.176
dc.relation.ispartofsjr0,739
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.titleEffect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxyen
dc.typeArtigo
dcterms.licensehttp://publishing.aip.org/authors/web-posting-guidelines
dcterms.rightsHolderAmer Inst Physics
unesp.author.lattes6977466698742311
unesp.author.orcid0000-0001-8567-0705[4]
unesp.author.orcid0000-0003-0758-0389[6]
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Ciências, Baurupt
unesp.departmentFísica - FCpt

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