Effects of substrate temperature, substrate orientation, and energetic atomic collisions on the structure of GaN films grown by reactive sputtering

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dc.contributor.authorSchiaber, Ziani S. [UNESP]
dc.contributor.authorLeite, Douglas M. G.
dc.contributor.authorBortoleto, Jose R. R. [UNESP]
dc.contributor.authorLisboa Filho, Paulo Noronha [UNESP]
dc.contributor.authorSilva, Jose H. D. da [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniv Fed Itajuba
dc.date.accessioned2014-12-03T13:08:44Z
dc.date.available2014-12-03T13:08:44Z
dc.date.issued2013-11-14
dc.description.abstractThe combined effects of substrate temperature, substrate orientation, and energetic particle impingement on the structure of GaN films grown by reactive radio-frequency magnetron sputtering are investigated. Monte-Carlo based simulations are employed to analyze the energies of the species generated in the plasma and colliding with the growing surface. Polycrystalline films grown at temperatures ranging from 500 to 1000 degrees C clearly showed a dependence of orientation texture and surface morphology on substrate orientation (c- and a- plane sapphire) in which the (0001) GaN planes were parallel to the substrate surface. A large increase in interplanar spacing associated with the increase in both a- and c- parameters of the hexagonal lattice and a redshift of the optical bandgap were observed at substrate temperatures higher than 600 degrees C. The results showed that the tensile stresses produced during the film's growth in high-temperature deposition ranges were much larger than the expected compressive stresses caused by the difference in the thermal expansion coefficients of the film and substrate in the cool-down process after the film growth. The best films were deposited at 500 degrees C, 30W and 600 degrees C, 45 W, which corresponds to conditions where the out diffusion from the film is low. Under these conditions the benefits of the temperature increase because of the decrease in defect density are greater than the problems caused by the strongly strained lattice that occurr at higher temperatures. The results are useful to the analysis of the growth conditions of GaN films by reactive sputtering. (c) 2013 AIP Publishing LLC.en
dc.description.affiliationUniv Estadual Paulista, UNESP, BR-17033360 Sao Paulo, Brazil
dc.description.affiliationUniv Fed Itajuba, UNIFEI, BR-37500903 Itajuba, MG, Brazil
dc.description.affiliationUniv Estadual Paulista, UNESP, BR-18087180 Sao Paulo, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, UNESP, BR-17033360 Sao Paulo, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, UNESP, BR-18087180 Sao Paulo, Brazil
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipIdFAPESP: 12/21147-7
dc.description.sponsorshipIdFAPESP: 11/22664-2
dc.description.sponsorshipIdFAPESP: 05/02249-0
dc.format.extent11
dc.identifierhttp://dx.doi.org/10.1063/1.4828873
dc.identifier.citationJournal Of Applied Physics. Melville: Amer Inst Physics, v. 114, n. 18, 11 p., 2013.
dc.identifier.doi10.1063/1.4828873
dc.identifier.fileWOS000327261800026.pdf
dc.identifier.issn0021-8979
dc.identifier.lattes1353862414532005
dc.identifier.orcid0000-0002-7734-4069
dc.identifier.urihttp://hdl.handle.net/11449/111532
dc.identifier.wosWOS:000327261800026
dc.language.isoeng
dc.publisherAmerican Institute of Physics (AIP)
dc.relation.ispartofJournal of Applied Physics
dc.relation.ispartofjcr2.176
dc.relation.ispartofsjr0,739
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.titleEffects of substrate temperature, substrate orientation, and energetic atomic collisions on the structure of GaN films grown by reactive sputteringen
dc.typeArtigo
dcterms.rightsHolderAmer Inst Physics
unesp.author.lattes1353862414532005[4]
unesp.author.orcid0000-0002-7734-4069[4]

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