Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers

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dc.contributor.authorJunior, Braz Baptista [UNESP]
dc.contributor.authorDe Andrade, Maria Gloria Cano [UNESP]
dc.contributor.authorDe Oliveira Bergamim, Luis Felipe [UNESP]
dc.contributor.authorNogueira, Carlos Roberto [UNESP]
dc.contributor.authorAbud, Renan Baptista [UNESP]
dc.contributor.authorSimoen, Eddy
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)
dc.contributor.institutionBelgium Also Imec
dc.date.accessioned2023-07-29T15:13:19Z
dc.date.available2023-07-29T15:13:19Z
dc.date.issued2022-01-01
dc.description.abstractIn this paper, the temperature dependence of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrates is studied experimentally. Drain current (ID), transconductance (gm), threshold voltage (VT) and drain-induced barrier lowering (DIBL) were analyzed in the temperature range from -35°C to 200°C. In addition, gate current (IG) and subthreshold slope (SS) were also analyzed in order to understand the physical mechanisms involved. The results indicate that gate current increases with increasing temperature. Also, as the gate current (IG) increases, the drain current (ID) decreases. The characteristics of AlGaN/GaN HEMTs on silicon substrates indicate that they may be a promising candidate for analog and radio frequency (RF) applications.en
dc.description.affiliationSão Paulo State University (UNESP) Institute of Science and Technology, SP
dc.description.affiliationGhent University Ghent Belgium Also Imec
dc.description.affiliationUnespSão Paulo State University (UNESP) Institute of Science and Technology, SP
dc.identifierhttp://dx.doi.org/10.1109/LAEDC54796.2022.9908239
dc.identifier.citation2022 IEEE Latin America Electron Devices Conference, LAEDC 2022.
dc.identifier.doi10.1109/LAEDC54796.2022.9908239
dc.identifier.scopus2-s2.0-85141344803
dc.identifier.urihttp://hdl.handle.net/11449/249337
dc.language.isoeng
dc.relation.ispartof2022 IEEE Latin America Electron Devices Conference, LAEDC 2022
dc.sourceScopus
dc.subjectAlGaN/GaN
dc.subjectgate leakage
dc.subjectHEMT
dc.subjectHigh-temperature
dc.titleTemperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafersen
dc.typeTrabalho apresentado em evento

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