Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation

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dc.contributor.authorCano de Andrade, Maria Gloria [UNESP]
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionIMEC
dc.contributor.institutionKatholieke Univ Leuven
dc.date.accessioned2015-03-18T15:53:41Z
dc.date.available2015-03-18T15:53:41Z
dc.date.issued2014-11-01
dc.description.abstractIn this paper, the influence of proton irradiation is experimentally studied in triple-gate Bulk FinFETs with and without Dynamic Threshold MOS configuration (DTMOS). The drain current, transconductance, Drain Induced Barrier Lowering (DIBL) and the important figures of merit for the analog performance such as transconductance-over-drain current, output conductance and intrinsic voltage gain will be compared. Furthermore, the Low-Frequency (LF) noise will be also analyzed in the DT mode and the standard biasing configuration. The results indicate that the better electrical characteristics and analog performance of DTMOS FinFETs make them very competitive candidates for low-noise RF analog applications in a radiation environment. (C) 2014 Elsevier Ltd. All rights reserved.en
dc.description.affiliationUniv Estadual Paulista, UNESP, BR-18087180 Sorocaba, Brazil
dc.description.affiliationUniv Sao Paulo, LSI PSI USP, BR-05508010 Sao Paulo, Brazil
dc.description.affiliationIMEC, B-3001 Louvain, Belgium
dc.description.affiliationKatholieke Univ Leuven, EE Dept, B-3001 Louvain, Belgium
dc.description.affiliationUnespUniv Estadual Paulista, UNESP, BR-18087180 Sorocaba, Brazil
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipESA
dc.description.sponsorshipIdESA22485/09/NL/PA
dc.format.extent2349-2354
dc.identifierhttp://dx.doi.org/10.1016/j.microrel.2014.06.013
dc.identifier.citationMicroelectronics Reliability. Oxford: Pergamon-elsevier Science Ltd, v. 54, n. 11, p. 2349-2354, 2014.
dc.identifier.doi10.1016/j.microrel.2014.06.013
dc.identifier.issn0026-2714
dc.identifier.urihttp://hdl.handle.net/11449/116667
dc.identifier.wosWOS:000346212900001
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofMicroelectronics Reliability
dc.relation.ispartofjcr1.236
dc.relation.ispartofsjr0,388
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectDTMOS FinFETsen
dc.subjectProton irradiationen
dc.subjectAnalog performanceen
dc.subjectLow-frequency noiseen
dc.subjectFlicker noiseen
dc.subjectGeneration-recombination noiseen
dc.titleInvestigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiationen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
unesp.author.orcid0000-0001-8121-6513[2]
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Ciência e Tecnologia, Sorocabapt

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