Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates

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dc.contributor.authorNoriega, O. C.
dc.contributor.authorTabata, A.
dc.contributor.authorSoares, JANT
dc.contributor.authorRodrigues, SCP
dc.contributor.authorLeite, JR
dc.contributor.authorRibeiro, E.
dc.contributor.authorFernandez, JRL
dc.contributor.authorMeneses, E. A.
dc.contributor.authorCerdeira, F.
dc.contributor.authorAs, D. J.
dc.contributor.authorSchikora, D.
dc.contributor.authorLischka, K.
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade Estadual de Campinas (UNICAMP)
dc.contributor.institutionUniv Paderborn
dc.date.accessioned2014-05-20T15:26:57Z
dc.date.available2014-05-20T15:26:57Z
dc.date.issued2003-05-01
dc.description.abstractThe optical properties of cubic GaN epitaxial layers were investigated by modulated photoreflectance (PR) and photoluminescence in the temperature interval from 5 to 300 K. The epilayers were grown on GaAs(001) substrates by molecular beam epitaxy using a nitrogen RIF-activated plasma source. The PR spectra show a transition which is well fitted using the third-derivative functional form of the unperturbed dielectric function, which we interpret as band-to-band transition. Our results allow determination of the temperature dependence of the main gap of c-GaN and give insights into the residual strain in the film, as well as allow us to estimate the binding energy of the complex formed by an exciton bound to a neutral acceptor. (C) 2003 Elsevier B.V. B.V. All rights reserved.en
dc.description.affiliationUniv São Paulo, Inst Fis, BR-05315970 São Paulo, Brazil
dc.description.affiliationUniv Estadual Paulista, BR-17033360 Bauru, Brazil
dc.description.affiliationUniv Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazil
dc.description.affiliationUniv Paderborn, Phys FB 6, D-33095 Paderborn, Germany
dc.description.affiliationUnespUniv Estadual Paulista, BR-17033360 Bauru, Brazil
dc.format.extent208-212
dc.identifierhttp://dx.doi.org/10.1016/S0022-0248(02)02517-4
dc.identifier.citationJournal of Crystal Growth. Amsterdam: Elsevier B.V., v. 252, n. 1-3, p. 208-212, 2003.
dc.identifier.doi10.1016/S0022-0248(02)02517-4
dc.identifier.issn0022-0248
dc.identifier.urihttp://hdl.handle.net/11449/37010
dc.identifier.wosWOS:000182145400031
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofJournal of Crystal Growth
dc.relation.ispartofjcr1.742
dc.relation.ispartofsjr0,592
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectphotoluminescencept
dc.subjectphotoreflectancept
dc.subjectmolecular beam epitaxypt
dc.subjectGaNpt
dc.titlePhotoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substratesen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
unesp.author.lattes9354064620643611[2]
unesp.author.orcid0000-0002-0901-3049[6]
unesp.author.orcid0000-0002-3674-5261[7]
unesp.author.orcid0000-0002-9389-0238[2]

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