New method for self-heating estimation using only DC measurements

dc.contributor.authorMori, C. A.B.
dc.contributor.authorAgopian, P. G.D. [UNESP]
dc.contributor.authorMartino, J. A.
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2018-12-11T16:54:46Z
dc.date.available2018-12-11T16:54:46Z
dc.date.issued2018-05-03
dc.description.abstractThis paper reports a new method for estimating the thermal resistance of a device using the inverse of the transistor efficiency as a function of the power applied to the transistor's channel. The advantages of this new method are the use of DC measurements only and errors smaller than 4% in the estimation of the channel temperature increase due to the SHE when compared to a pulsed method for the UTBB SOI studied in this work.en
dc.description.affiliationLSI/PSI/USP University of Sao Paulo
dc.description.affiliationSao Paulo State University (UNESP)
dc.description.affiliationUnespSao Paulo State University (UNESP)
dc.format.extent1-4
dc.identifierhttp://dx.doi.org/10.1109/ULIS.2018.8354756
dc.identifier.citation2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018, v. 2018-January, p. 1-4.
dc.identifier.doi10.1109/ULIS.2018.8354756
dc.identifier.lattes0496909595465696
dc.identifier.orcid0000-0002-0886-7798
dc.identifier.scopus2-s2.0-85050906462
dc.identifier.urihttp://hdl.handle.net/11449/171293
dc.language.isoeng
dc.relation.ispartof2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
dc.rights.accessRightsAcesso restrito
dc.sourceScopus
dc.subjectSelf-heating effect
dc.subjectSilicon-On-Insulator
dc.subjectUTBB
dc.titleNew method for self-heating estimation using only DC measurementsen
dc.typeTrabalho apresentado em evento
unesp.author.lattes0496909595465696[2]
unesp.author.orcid0000-0002-0886-7798[2]

Arquivos

Coleções