Effect of electron magnetic trapping in a plasma immersion ion implantation system

dc.contributor.authorKostov, K. G. [UNESP]
dc.contributor.authorAlgatti, M. A. [UNESP]
dc.contributor.authorPillaca, E. J. D. M. [UNESP]
dc.contributor.authorKayama, M. E. [UNESP]
dc.contributor.authorMota, Rogério Pinto [UNESP]
dc.contributor.authorHonda, Roberto Yzumi [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T13:27:46Z
dc.date.available2014-05-20T13:27:46Z
dc.date.issued2009-08-01
dc.description.abstractIn this work we describe a two-dimensional computer simulation of magnetic field enhanced plasma immersion implantation system. Negative bias voltage of 10.0 kV is applied to a cylindrical target located on the axis of a grounded vacuum chamber filled with uniform nitrogen plasma. A pair of external coils creates a static magnetic field with main vector component along the axial direction. Thus, a system of crossed ExB field is generated inside the vessel forcing plasma electrons to rotate in azimuthal direction. In addition, the axial variation of the magnetic field intensity produces magnetic mirror effect that enables axial particle confinement. It is found that high-density plasma regions are formed around the target due to intense background gas ionization by the trapped electrons. Effect of the magnetic field on the sheath dynamics and the implantation current density of the PIII system is investigated. By changing the magnetic field axial profile (varying coils separation) an enhancement of about 30% of the retained dose can be achieved. The results of the simulation show that the magnetic mirror configuration brings additional benefits to the PIII process, permitting more precise control of the implanted dose.en
dc.description.affiliationUNESP, State Univ São Paulo, Dept Chem & Phys, Fac Engn FEG, BR-12516410 Guaratingueta, SP, Brazil
dc.description.affiliationUnespUNESP, State Univ São Paulo, Dept Chem & Phys, Fac Engn FEG, BR-12516410 Guaratingueta, SP, Brazil
dc.description.sponsorshipFundação para o Desenvolvimento da UNESP (FUNDUNESP)
dc.format.extent205-209
dc.identifierhttp://dx.doi.org/10.1140/epjd/e2009-00036-6
dc.identifier.citationEuropean Physical Journal D. New York: Springer, v. 54, n. 2, p. 205-209, 2009.
dc.identifier.doi10.1140/epjd/e2009-00036-6
dc.identifier.issn1434-6060
dc.identifier.lattes1946509801000450
dc.identifier.lattes9585258374949244
dc.identifier.lattes0400554449253191
dc.identifier.lattes0406258050385008
dc.identifier.urihttp://hdl.handle.net/11449/9196
dc.identifier.wosWOS:000268329200012
dc.language.isoeng
dc.publisherSpringer
dc.relation.ispartofEuropean Physical Journal D
dc.relation.ispartofjcr1.393
dc.relation.ispartofsjr0,387
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.titleEffect of electron magnetic trapping in a plasma immersion ion implantation systemen
dc.typeArtigo
dcterms.licensehttp://www.springer.com/open+access/authors+rights?SGWID=0-176704-12-683201-0
dcterms.rightsHolderSpringer
unesp.author.lattes1946509801000450
unesp.author.lattes9585258374949244
unesp.author.lattes0400554449253191
unesp.author.lattes0406258050385008
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Engenharia, Guaratinguetápt
unesp.departmentFísica e Química - FEGpt

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