Voltage gain improvement of the operational transconductance amplifier designed with silicon-on-insulator fin field effect transistor after being exposed to proton-irradiation

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dc.contributor.authorDe Sousa, Bruna Ramos
dc.contributor.authorDe Moraes Nogueira, Alexandro
dc.contributor.authorDer Agopian, Paula Ghedini [UNESP]
dc.contributor.authorMartino, Joao Antonio
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2021-06-25T10:22:01Z
dc.date.available2021-06-25T10:22:01Z
dc.date.issued2021-03-01
dc.description.abstractIn this work, the influence of proton-irradiation in the voltage gain of two-stage operational transconductance amplifier (OTA) designed with silicon-on-insulator (SOI) fin field effect transistors (FinFETs) is studied. The OTA simulations were performed using Verilog-A approach based on experimental data extracted from the SOI FinFET electrical characterization, before and after proton-irradiation. The OTA is designed with SOI FinFETs of fin widths (Wfin) of 20 nm, 120 nm, and 870 nm, all in the same predefined inversion region (gm/ID = 8 V-1). All evaluated OTA circuits exposed to proton-irradiation presented a voltage gain increase (compared with pre-irradiation circuits), of 0.87 dB, 1.19 dB, and 6.16 dB for fin widths of 20 nm, 120 nm, and 870 nm, respectively. The results show that despite the typical radiation effect of degradation of the individual transistors (it being more severe for larger fin width SOI FinFET), these effects combined in OTA circuits result in an unexpected improvement in DC voltage gain, especially for wider fins. Focusing on the fin width impact on the OTA voltage gain, before and after proton-irradiation, it is much greater for narrow fin width SOI FinFET thanks to the better Early voltage.en
dc.description.affiliationLSI/PSI/USP University of Sao Paulo
dc.description.affiliationUNESP Sao Paulo State University
dc.description.affiliationUnespUNESP Sao Paulo State University
dc.identifierhttp://dx.doi.org/10.1088/1361-6641/abd349
dc.identifier.citationSemiconductor Science and Technology, v. 36, n. 3, 2021.
dc.identifier.doi10.1088/1361-6641/abd349
dc.identifier.issn1361-6641
dc.identifier.issn0268-1242
dc.identifier.scopus2-s2.0-85100356515
dc.identifier.urihttp://hdl.handle.net/11449/205834
dc.language.isoeng
dc.relation.ispartofSemiconductor Science and Technology
dc.sourceScopus
dc.subjectFin field effect transistor
dc.subjectOperational transconductance amplifier
dc.subjectProton-irradiation
dc.subjectVerilog-A
dc.titleVoltage gain improvement of the operational transconductance amplifier designed with silicon-on-insulator fin field effect transistor after being exposed to proton-irradiationen
dc.typeArtigo
unesp.author.orcid0000-0003-3836-1939[1]
unesp.author.orcid0000-0002-6248-2514[2]
unesp.author.orcid0000-0002-0886-7798 0000-0002-0886-7798[3]
unesp.author.orcid0000-0001-8121-6513[4]

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