Characterization of metallic electrical contacts to SnO2 thin films lightly doped with Eu3+ ions, and photo-induced resistivity

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dc.contributor.authorda Silva, Vitor D. L. [UNESP]
dc.contributor.authorde Andrade, Aloisio [UNESP]
dc.contributor.authorScalvi, Luis Vicente de Andrade [UNESP]
dc.contributor.authorFloriano, Emerson A. [UNESP]
dc.contributor.authorMaciel, Jorge L. B. [UNESP]
dc.contributor.authorRavaro, Leandro P. [UNESP]
dc.contributor.authorSantos, Julio C. [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T13:26:14Z
dc.date.available2014-05-20T13:26:14Z
dc.date.issued2012-06-15
dc.description.abstractLightly Eu3+-doped (0.05%) SnO2 thin films are deposited by the sol-gel-dip-coating technique, topped by alternative metallic layers of Al, Sn or In, arranged in a parallel layout on the thin film surface, and deposited by the resistive evaporation technique. Electrical characterization results show that the sort of deposited metal strongly modifies the device resistance, besides thermally treated metallic layers decreases the device resistivity, which may be associated with increased tunneling probability. Current as function of applied voltage show a good linear symmetry contacts for a large temperature range (30-320 K). However, this feature is due to the MSM (metal-semiconductor-metal) structure of the device, because the conduction through the reversed-biased junction is the main mechanism of electrical transport at Schottky potential barriers. The barrier height evaluation is also presented, considering that the dominant mechanism is the thermionic emission through the reversed-biased junction, yielding values in the range 124 meV for annealed In contacts to 187 meV for untreated Sn contacts. This paper also shows results of photo-induced electrical characteristics under irradiation with below bandgap (450 nm) as well as above bandgap (266 nm) light on the SnO2 thin films, where the surface is coupled with untreated Sn contacts. (c) 2012 Elsevier B.V. All rights reserved.en
dc.description.affiliationUNESP, FC, Dept Phys, Bauru, SP, Brazil
dc.description.affiliationState Univ São Paulo, UNESP, FC, Grad Program Mat Sci & Technol POSMAT, BR-17033360 Bauru, SP, Brazil
dc.description.affiliationUNESP, FC, Dept Chem, Bauru, SP, Brazil
dc.description.affiliationUnespUNESP, FC, Dept Phys, Bauru, SP, Brazil
dc.description.affiliationUnespState Univ São Paulo, UNESP, FC, Grad Program Mat Sci & Technol POSMAT, BR-17033360 Bauru, SP, Brazil
dc.description.affiliationUnespUNESP, FC, Dept Chem, Bauru, SP, Brazil
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.format.extent994-1000
dc.identifierhttp://dx.doi.org/10.1016/j.matchemphys.2012.03.102
dc.identifier.citationMaterials Chemistry and Physics. Lausanne: Elsevier B.V. Sa, v. 134, n. 2-3, p. 994-1000, 2012.
dc.identifier.doi10.1016/j.matchemphys.2012.03.102
dc.identifier.issn0254-0584
dc.identifier.lattes7730719476451232
dc.identifier.orcid0000-0001-5762-6424
dc.identifier.urihttp://hdl.handle.net/11449/8430
dc.identifier.wosWOS:000305918200064
dc.language.isoeng
dc.publisherElsevier B.V. Sa
dc.relation.ispartofMaterials Chemistry and Physics
dc.relation.ispartofjcr2.210
dc.relation.ispartofsjr0,615
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectInterfacesen
dc.subjectThin filmsen
dc.subjectSol-gel growthen
dc.subjectElectrical propertiesen
dc.titleCharacterization of metallic electrical contacts to SnO2 thin films lightly doped with Eu3+ ions, and photo-induced resistivityen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V. Sa
unesp.author.lattes7730719476451232[3]
unesp.author.orcid0000-0001-5762-6424[3]
unesp.author.orcid0000-0002-4932-5776[6]
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Ciências, Baurupt
unesp.departmentFísica - FCpt
unesp.departmentQuímica - FCpt

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