Influence of the metastable state (V 0++) on the electronic properties of SnO2nanowires under the influence of light

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dc.contributor.authorCosta, I. M. [UNESP]
dc.contributor.authorTeodoro, M. D.
dc.contributor.authorZaghete, M. A. [UNESP]
dc.contributor.authorChiquito, A. J.
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.date.accessioned2021-06-25T10:14:01Z
dc.date.available2021-06-25T10:14:01Z
dc.date.issued2020-09-21
dc.description.abstractIn general, the properties of oxide materials are directly related to the formation of defects in their structure. In this work, a correlation between the intrinsic defects of SnO2 nanowires with their optoelectronic and transport properties and the influence of illumination was traced. Photoluminescence experiments revealed that SnO2 nanowires are characterized by three emission centers related to oxygen vacancies, V 0 + (red), (V 0 +) iso (yellow/orange), and V 0 + + (green), the latter being active only below 100 K. This metastable defect was associated with the anomalous behavior observed in the temperature-dependent resistivity curves of ohmic single-nanowire devices under the influence of light. Two activation energies for a single nanowire in different temperature regions (T < 100 K and T > 100 K) were identified by photocurrent measurements. The activation energy for T < 100 K (7 meV) is consistent with the small value obtained in the photoluminescence experiments for the green-emitting center (3 meV). For the high-temperature region (T > 100 K), a higher activation energy value (220 meV) was observed.en
dc.description.affiliationLIEC Instituto de Química Universidade Estadual Paulista-UNESP
dc.description.affiliationNanOLaB Departamento de Física Universidade Federal de São Carlos
dc.description.affiliationGrupo de Nanoestruturas Semicondutoras Departamento de Física Universidade Federal de São Carlos
dc.description.affiliationUnespLIEC Instituto de Química Universidade Estadual Paulista-UNESP
dc.identifierhttp://dx.doi.org/10.1063/5.0021719
dc.identifier.citationJournal of Applied Physics, v. 128, n. 11, 2020.
dc.identifier.doi10.1063/5.0021719
dc.identifier.issn1089-7550
dc.identifier.issn0021-8979
dc.identifier.scopus2-s2.0-85093534034
dc.identifier.urihttp://hdl.handle.net/11449/205356
dc.language.isoeng
dc.relation.ispartofJournal of Applied Physics
dc.sourceScopus
dc.titleInfluence of the metastable state (V 0++) on the electronic properties of SnO2nanowires under the influence of lighten
dc.typeArtigo
unesp.author.orcid0000-0002-6294-8564 0000-0002-6294-8564[1]

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