Disorder effects produced by the Mn and H incorporations on the optical absorption edge of Ga1-xMnxAs:H nanocrystalline films

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dc.contributor.authorPereira, Andre L. J. [UNESP]
dc.contributor.authorSilva, José Humberto Dias da [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T13:26:21Z
dc.date.available2014-05-20T13:26:21Z
dc.date.issued2008-12-15
dc.description.abstractThe optical absorption edges of nanocrystalline Ga1-xMnxAs:H films (0.000 <= x <= 0.081) prepared by sputtering were analyzed. The influence of Mn and hydrogen incorporations were both investigated. The energy dispersive X-ray spectroscopy and X-ray diffraction measurements show that the films are nanocrystalline and do not display any evidence of Mn segregation, or of any other secondary phase formation. The transmittance measurements in the ultraviolet-visible-near infrared range allow us to calculate the absorption coefficient, the optical gap, and the Urbach energy. The hydrogenated Ga1-xMnxAs films presented wider gaps and smaller Urbach energies than its non-hydrogenated counterparts. In the hydrogenated films a linear correlation was observed between the decrease of the optical gap and the increase of the Urbach energy, which we have attributed to potential fluctuations and disorder induced by the Mn incorporation. (C) 2008 Elsevier B.V. All rights reserved.en
dc.description.affiliationUniv Estadual Paulista UNESP, Fac Ciencias, Adv Mat Grp, Dept Fis, BR-17033360 Bauru, SP, Brazil
dc.description.affiliationUnespUniv Estadual Paulista UNESP, Fac Ciencias, Adv Mat Grp, Dept Fis, BR-17033360 Bauru, SP, Brazil
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipIdFAPESP: 05/02249-0
dc.description.sponsorshipIdFAPESP: 05/03463-5
dc.format.extent5372-5377
dc.identifierhttp://dx.doi.org/10.1016/j.jnoncrysol.2008.09.025
dc.identifier.citationJournal of Non-crystalline Solids. Amsterdam: Elsevier B.V., v. 354, n. 52-54, p. 5372-5377, 2008.
dc.identifier.doi10.1016/j.jnoncrysol.2008.09.025
dc.identifier.issn0022-3093
dc.identifier.lattes1134426200935790
dc.identifier.urihttp://hdl.handle.net/11449/8483
dc.identifier.wosWOS:000261710700006
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofJournal of Non-Crystalline Solids
dc.relation.ispartofjcr2.488
dc.relation.ispartofsjr0,722
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectAmorphous semiconductorsen
dc.subjectIII-V semiconductorsen
dc.subjectCrystallizationen
dc.subjectNanocrystalsen
dc.subjectFilms and coatingsen
dc.subjectSputteringen
dc.subjectMicrostructureen
dc.subjectMicrocrystallinityen
dc.subjectOptical propertiesen
dc.subjectAbsorptionen
dc.titleDisorder effects produced by the Mn and H incorporations on the optical absorption edge of Ga1-xMnxAs:H nanocrystalline filmsen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
unesp.author.lattes1134426200935790
unesp.author.orcid0000-0003-4757-8080[1]
unesp.author.orcid0000-0003-0969-6481[2]
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Ciências, Baurupt
unesp.departmentFísica - FCpt

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