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Nucleation and growth evolution of InP dots on InGaP/GaAs

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dc.contributor.authorBortoleto, J. R. R. [UNESP]
dc.contributor.authorGazoto, A.
dc.contributor.authorBrasil, M. J. S. P.
dc.contributor.authorMeneses, E. A.
dc.contributor.authorCotta, M. A.
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade Estadual de Campinas (UNICAMP)
dc.date.accessioned2014-05-20T15:33:06Z
dc.date.available2014-05-20T15:33:06Z
dc.date.issued2010-07-21
dc.description.abstractWe have investigated the evolution in the heteroepitaxy of InP on InGaP/GaAs (0 0 1) layers from the initial formation of a strained wetting layer (WL) up to the development of quantum dots. Atomic force microscopy and RHEED as well as continuous and time-resolved photoluminescence measurements provide evidence of four main stages for InP growth evolution. Our results indicate that the InP dot formation occurs according to the Stranski-Krastanov growth mode coupled to a WL erosion mechanism driven by the spatially variable strain field present in the WL. Moreover, the correlation of morphological and optical data indicates the stability of dot shapes and interfaces in this system.en
dc.description.affiliationUNESP, GPM, BR-18087180 Sorocaba, SP, Brazil
dc.description.affiliationUniv Estadual Campinas, Inst Fis Gleb Wataghin, BR-13081970 Campinas, SP, Brazil
dc.description.affiliationUnespUNESP, GPM, BR-18087180 Sorocaba, SP, Brazil
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.format.extent5
dc.identifierhttp://dx.doi.org/10.1088/0022-3727/43/28/285301
dc.identifier.citationJournal of Physics D-applied Physics. Bristol: Iop Publishing Ltd, v. 43, n. 28, p. 5, 2010.
dc.identifier.doi10.1088/0022-3727/43/28/285301
dc.identifier.issn0022-3727
dc.identifier.urihttp://hdl.handle.net/11449/41826
dc.identifier.wosWOS:000279318600011
dc.language.isoeng
dc.publisherIop Publishing Ltd
dc.relation.ispartofJournal of Physics D: Applied Physics
dc.relation.ispartofjcr2.373
dc.relation.ispartofsjr0,717
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.titleNucleation and growth evolution of InP dots on InGaP/GaAsen
dc.typeArtigo
dcterms.licensehttp://iopscience.iop.org/page/copyright
dcterms.rightsHolderIop Publishing Ltd
dspace.entity.typePublication
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Ciência e Tecnologia, Sorocabapt
unesp.departmentEngenharia de Controle e Automação - ICTSpt

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